AAAAAA

   
Results: 1-8 |
Results: 8
A SILICON NANOCRYSTALS BASED MEMORY
Authors: TIWARI S RANA F HANAFI H HARTSTEIN A CRABBE EF CHAN K
Citation: S. Tiwari et al., A SILICON NANOCRYSTALS BASED MEMORY, Applied physics letters, 68(10), 1996, pp. 1377-1379
SI SIGE EPITAXIAL-BASE TRANSISTORS .1. MATERIALS, PHYSICS, AND CIRCUITS/
Authors: HARAME DL COMFORT JH CRESSLER JD CRABBE EF SUN JYC MEYERSON BS TICE T
Citation: Dl. Harame et al., SI SIGE EPITAXIAL-BASE TRANSISTORS .1. MATERIALS, PHYSICS, AND CIRCUITS/, I.E.E.E. transactions on electron devices, 42(3), 1995, pp. 455-468
SI SIGE EPITAXIAL-BASE TRANSISTORS .2. PROCESS INTEGRATION AND ANALOGAPPLICATIONS/
Authors: HARAME DL COMFORT JH CRESSLER JD CRABBE EF SUN JYC MEYERSON BS TICE T
Citation: Dl. Harame et al., SI SIGE EPITAXIAL-BASE TRANSISTORS .2. PROCESS INTEGRATION AND ANALOGAPPLICATIONS/, I.E.E.E. transactions on electron devices, 42(3), 1995, pp. 469-482
HIGH-INJECTION BARRIER EFFECTS IN SIGE HBTS OPERATING AT CRYOGENIC TEMPERATURES
Authors: CRESSLER JD RICHEY DM JAEGER RC CRABBE EF COMFORT JH STORK JMC
Citation: Jd. Cressler et al., HIGH-INJECTION BARRIER EFFECTS IN SIGE HBTS OPERATING AT CRYOGENIC TEMPERATURES, Journal de physique. IV, 4(C6), 1994, pp. 117-122
AN EPITAXIAL EMITTER-CAP SIGE-BASE BIPOLAR TECHNOLOGY OPTIMIZED FOR LIQUID-NITROGEN TEMPERATURE OPERATION
Authors: CRESSLER JD CRABBE EF COMFORT JH SUN JYC STORK JMC
Citation: Jd. Cressler et al., AN EPITAXIAL EMITTER-CAP SIGE-BASE BIPOLAR TECHNOLOGY OPTIMIZED FOR LIQUID-NITROGEN TEMPERATURE OPERATION, IEEE electron device letters, 15(11), 1994, pp. 472-474
SI SI1-XGEX VALENCE-BAND DISCONTINUITY MEASUREMENTS USING A SEMICONDUCTOR-INSULATOR-SEMICONDUCTOR (SIS) HETEROSTRUCTURE/
Authors: GAN CH DELALAMO JA BENNETT BR MEYERSON BS CRABBE EF SODINI CG REIF LR
Citation: Ch. Gan et al., SI SI1-XGEX VALENCE-BAND DISCONTINUITY MEASUREMENTS USING A SEMICONDUCTOR-INSULATOR-SEMICONDUCTOR (SIS) HETEROSTRUCTURE/, I.E.E.E. transactions on electron devices, 41(12), 1994, pp. 2430-2439
SIGE-CHANNEL HETEROJUNCTION P-MOSFETS
Authors: VERDONCKTVANDEBROEK S CRABBE EF MEYERSON BS HARAME DL RESTLE PJ STORK JMC JOHNSON JB
Citation: S. Verdoncktvandebroek et al., SIGE-CHANNEL HETEROJUNCTION P-MOSFETS, I.E.E.E. transactions on electron devices, 41(1), 1994, pp. 90-101
HIGH-LOW POLYSILICON-EMITTER SIGE-BASE BIPOLAR-TRANSISTORS
Authors: CRABBE EF COMFORT JH CRESSLER JD SUN JYC STORK JMC
Citation: Ef. Crabbe et al., HIGH-LOW POLYSILICON-EMITTER SIGE-BASE BIPOLAR-TRANSISTORS, IEEE electron device letters, 14(10), 1993, pp. 478-480
Risultati: 1-8 |