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Results: 1-8 |
Results: 8
PHOTOLUMINESCENCE OF QUASI-DIRECT TRANSITIONS IN DISORDERED IN1-XGAXPGRADED GAP ALLOYS
Authors: FU LP CHTCHEKINE DG GILLILAND GD LEE H HJALMARSON HP YU JG CRAFORD MG WOLFORD DJ
Citation: Lp. Fu et al., PHOTOLUMINESCENCE OF QUASI-DIRECT TRANSITIONS IN DISORDERED IN1-XGAXPGRADED GAP ALLOYS, IEEE journal of quantum electronics, 33(7), 1997, pp. 1123-1131
RECOMBINATION DYNAMICS IN INGAN QUANTUM-WELLS
Authors: JEON ES KOZLOV V SONG YK VERTIKOV A KUBALL M NURMIKKO AV LIU H CHEN C KERN RS KUO CP CRAFORD MG
Citation: Es. Jeon et al., RECOMBINATION DYNAMICS IN INGAN QUANTUM-WELLS, Applied physics letters, 69(27), 1996, pp. 4194-4196
TEMPERATURE-DEPENDENT MINORITY-CARRIER LIFETIME MEASUREMENTS OF RED ALGAAS LIGHT-EMITTING-DIODES
Authors: STERANKA FM DEFEVERE DC CAMRAS MD RUDAZ SL MCELFRESH DK COOK LW SNYDER WL CRAFORD MG
Citation: Fm. Steranka et al., TEMPERATURE-DEPENDENT MINORITY-CARRIER LIFETIME MEASUREMENTS OF RED ALGAAS LIGHT-EMITTING-DIODES, Journal of electronic materials, 24(10), 1995, pp. 1407-1412
OBSERVATION OF QUASI-DIRECT TRANSITIONS IN IN1-XGAXP GRADED ESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.75) ALLOYS NEAR THE GAMMA-X(1) CROSSOVER/
Authors: LEE H KLEIN MV FU LP GILLILAND GD HJALMARSON HP ASPNES DE HSIEH KC KIM J YU JG CRAFORD MG
Citation: H. Lee et al., OBSERVATION OF QUASI-DIRECT TRANSITIONS IN IN1-XGAXP GRADED ESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.75) ALLOYS NEAR THE GAMMA-X(1) CROSSOVER/, Physical review. B, Condensed matter, 51(7), 1995, pp. 4186-4192
HIGH DISLOCATION DENSITIES IN HIGH-EFFICIENCY GAN-BASED LIGHT-EMITTING-DIODES
Authors: LESTER SD PONCE FA CRAFORD MG STEIGERWALD DA
Citation: Sd. Lester et al., HIGH DISLOCATION DENSITIES IN HIGH-EFFICIENCY GAN-BASED LIGHT-EMITTING-DIODES, Applied physics letters, 66(10), 1995, pp. 1249-1251
OPTICAL STUDY OF (ALXGA1-X)(0.5)IN0.5P GAAS SEMICONDUCTOR ALLOYS BY SPECTROSCOPIC ELLIPSOMETRY (VOL 73, PG 400, 1993)/
Authors: LEE H KLEIN MV ASPNES DE KUO CP PEANASKY M CRAFORD MG
Citation: H. Lee et al., OPTICAL STUDY OF (ALXGA1-X)(0.5)IN0.5P GAAS SEMICONDUCTOR ALLOYS BY SPECTROSCOPIC ELLIPSOMETRY (VOL 73, PG 400, 1993)/, Journal of applied physics, 75(1), 1994, pp. 679-679
VERY HIGH-EFFICIENCY SEMICONDUCTOR WAFER-BONDED TRANSPARENT-SUBSTRATE(ALXGA1-X)0.5IN0.5P GAP LIGHT-EMITTING-DIODES/
Authors: KISH FA STERANKA FM DEFEVERE DC VANDERWATER DA PARK KG KUO CP OSENTOWSKI TD PEANASKY MJ YU JG FLETCHER RM STEIGERWALD DA CRAFORD MG ROBBINS VM
Citation: Fa. Kish et al., VERY HIGH-EFFICIENCY SEMICONDUCTOR WAFER-BONDED TRANSPARENT-SUBSTRATE(ALXGA1-X)0.5IN0.5P GAP LIGHT-EMITTING-DIODES/, Applied physics letters, 64(21), 1994, pp. 2839-2841
I-2 AN OVERVIEW OF VISIBLE-LIGHT EMITTING DIODE (LED) DEVELOPMENT ANDTHE POTENTIAL FOR ALINGAP DEVICES
Authors: CRAFORD MG
Citation: Mg. Craford, I-2 AN OVERVIEW OF VISIBLE-LIGHT EMITTING DIODE (LED) DEVELOPMENT ANDTHE POTENTIAL FOR ALINGAP DEVICES, I.E.E.E. transactions on electron devices, 40(11), 1993, pp. 2098-2098
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