Authors: THURZO I GMUCOVA K CSABAY O HARMATHA L BURGHARDT H BEYER R

Citation: I. Thurzo et al., AN EXPERIMENTAL-STUDY OF SIOXNY SI INTERFACES PREPARED BY RAPID THERMAL-PROCESSING - EVIDENCE FOR 2 GROUPS OF INTERFACE STATES/, Physica status solidi. a, Applied research, 151(2), 1995, pp. 345-353

Authors: CSABAY O JAMRICH M FRANK H

Citation: O. Csabay et al., COMPUTER-CONTROLLED SPREADING RESISTANCE SYSTEM FOR MEASUREMENT OF CARRIER CONCENTRATION PROFILES OF SILICON STRUCTURES, Czechoslovak journal of Physics, 43(7), 1993, pp. 723-731