Authors: SIEG RM CARLIN JA BOECKL JJ RINGEL SA CURRIE MT TING SM LANGDO TA TARASCHI G FITZGERALD EA KEYES BM

Citation: Rm. Sieg et al., HIGH MINORITY-CARRIER LIFETIMES IN GAAS GROWN ON LOW-DEFECT-DENSITY GE GESI/SI SUBSTRATES/, Applied physics letters, 73(21), 1998, pp. 3111-3113

Authors: SAMAVEDAM SB CURRIE MT LANGDO TA FITZGERALD EA

Citation: Sb. Samavedam et al., HIGH-QUALITY GERMANIUM PHOTODIODES INTEGRATED ON SILICON SUBSTRATES USING OPTIMIZED RELAXED GRADED BUFFERS, Applied physics letters, 73(15), 1998, pp. 2125-2127

Authors: CURRIE MT SAMAVEDAM SB LANGDO TA LEITZ CW FITZGERALD EA

Citation: Mt. Currie et al., CONTROLLING THREADING DISLOCATION DENSITIES IN GE ON SI USING GRADED SIGE LAYERS AND CHEMICAL-MECHANICAL POLISHING, Applied physics letters, 72(14), 1998, pp. 1718-1720