Authors: CYCA BR ROBINS KG TARR NG XU DX NOEL JP LANDHEER D SIMARDNORMANDIN M

Citation: Br. Cyca et al., HOLE CONFINEMENT AND MOBILITY IN HETEROSTRUCTURE SI GE/SI P-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS/, Journal of applied physics, 81(12), 1997, pp. 8079-8083