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Results: 1-6 |
Results: 6

Authors: KONUMA M SILIER I GUTJAHR A HANSSON PO CRISTIANI G CZECH E BAUSER E BANHART F
Citation: M. Konuma et al., CENTRIFUGAL TECHNIQUES FOR SOLUTION GROWTH OF SEMICONDUCTOR LAYERS, Journal of crystal growth, 166(1-4), 1996, pp. 234-238

Authors: SILIER I GUTJAHR A NAGEL N HANSSON PO CZECH E KONUMA M BAUSER E BANHART F KOHLER R RAIDT H JENICHEN B
Citation: I. Silier et al., SOLUTION GROWTH OF EPITAXIAL SEMICONDUCTOR-ON-INSULATOR LAYERS, Journal of crystal growth, 166(1-4), 1996, pp. 727-730

Authors: KONUMA M SILIER I CZECH E BAUSER E
Citation: M. Konuma et al., SEMICONDUCTOR LIQUID-PHASE EPITAXY FOR SOLAR-CELL APPLICATION, Solar energy materials and solar cells, 34(1-4), 1994, pp. 251-256

Authors: BANHART F NAGEL N PHILLIPP F CZECH E SILIER I BAUSER E
Citation: F. Banhart et al., THE COALESCENCE OF SILICON LAYERS GROWN OVER SIO2 BY LIQUID-PHASE EPITAXY .2. STRAINS AND DEFECT NUCLEATION STUDIED BY TRANSMISSION ELECTRON-MICROSCOPY, Applied physics. A, Solids and surfaces, 57(5), 1993, pp. 441-448

Authors: NAGEL N BANHART F CZECH E SILIER I PHILLIPP F BAUSER E
Citation: N. Nagel et al., THE COALESCENCE OF SILICON LAYERS GROWN OVER SIO2 BY LIQUID-PHASE EPITAXY .1. GROWTH AND COALESCENCE OF DEFECT-FREE SILICON LAYERS, Applied physics. A, Solids and surfaces, 57(3), 1993, pp. 249-254

Authors: KONUMA M CZECH E SILIER I BAUSER E
Citation: M. Konuma et al., LIQUID-PHASE EPITAXY CENTRIFUGE FOR 100 MM DIAMETER SI SUBSTRATES, Applied physics letters, 63(2), 1993, pp. 205-207
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