Authors: Capano, MA Santhakumar, R Venugopal, R Melloch, MR Cooper, JA

Citation: Ma. Capano et al., Phosphorus implantation into 4H-silicon carbide, J ELEC MAT, 29(2), 2000, pp. 210-214

Authors: Capano, MA Cooper, JA Melloch, MR Saxler, A Mitchel, WC

Citation: Ma. Capano et al., Ionization energies and electron mobilities in phosphorus- and nitrogen-implanted 4H-silicon carbide, J APPL PHYS, 87(12), 2000, pp. 8773-8777

Authors: Adesida, I Capano, MA Melloch, MR Nakamura, S

Citation: I. Adesida et al., Special issue papers on III-V nitrides and silicon carbide - Foreword, J ELEC MAT, 28(3), 1999, pp. 135-135

Authors: Smith, SR Evwaraye, AO Mitchel, WC Capano, MA

Citation: Sr. Smith et al., Shallow acceptor levels in 4H- and 6H-SiC, J ELEC MAT, 28(3), 1999, pp. 190-195

Authors: Capano, MA Ryu, S Cooper, JA Melloch, MR Rottner, K Karlsson, S Nordell, N Powell, A Walker, DE

Citation: Ma. Capano et al., Surface roughening in ion implanted 4H-silicon carbide, J ELEC MAT, 28(3), 1999, pp. 214-218