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Results:
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Results: 22
Authors:
Losurdo, M
Grimaldi, A
Giangregorio, M
Capezzuto, P
Bruno, G
Citation: M. Losurdo et al., GaN heteroepitaxy by remote plasma MOCVD: Real time monitoring by laser reflectance interferometry, J PHYS IV, 11(PR3), 2001, pp. 1175-1182
Authors:
Cicala, G
Capezzuto, P
Bruno, G
Citation: G. Cicala et al., Microcrystalline silicon by plasma enhanced chemical vapor deposition fromsilicon tetrafluoride, J VAC SCI A, 19(2), 2001, pp. 515-523
Authors:
Perna, G
Capozzi, V
Augelli, V
Ligonzo, T
Schiavulli, L
Bruno, G
Losurdo, M
Capezzuto, P
Staehli, JL
Pallara, M
Citation: G. Perna et al., Luminescence study of the disorder in polycrystalline InP thin films, SEMIC SCI T, 16(5), 2001, pp. 377-385
Authors:
Losurdo, M
Roca, F
De Rosa, R
Capezzuto, P
Bruno, G
Citation: M. Losurdo et al., Spectroscopic ellipsometry study of interfaces and crystallization behavior during annealing of a-Si : H films, THIN SOL FI, 383(1-2), 2001, pp. 69-72
Authors:
Ambrico, M
Schiavulli, L
Ligonzo, T
Cicala, G
Capezzuto, P
Bruno, G
Citation: M. Ambrico et al., Optical absorption and electrical conductivity measurements of microcrystalline silicon layers grown by SiF4/H-2 plasma on glass substrates, THIN SOL FI, 383(1-2), 2001, pp. 200-202
Authors:
Cicala, G
Capezzuto, P
Bruno, G
Citation: G. Cicala et al., From amorphous to microcrystalline silicon deposition in SiF4-H-2-He plasmas: in situ control by optical emission spectroscopy, THIN SOL FI, 383(1-2), 2001, pp. 203-205
Authors:
Losurdo, M
Giangregorio, M
Capezzuto, P
Bruno, G
Varsano, F
Tucci, M
Roca, F
Citation: M. Losurdo et al., Modifications of c-Si/a-Si : H/indium tin oxide heterostructures upon thermal annealing, J APPL PHYS, 90(12), 2001, pp. 6505-6512
Authors:
Summonte, C
Rizzoli, R
Desalvo, A
Zignani, F
Centurioni, E
Pinghini, R
Bruno, G
Losurdo, M
Capezzuto, P
Gemmi, M
Citation: C. Summonte et al., Plasma-enhanced chemical vapour deposition of microcrystalline silicon: onthe dynamics of the amorphous-microcrystalline interface by optical methods, PHIL MAG B, 80(4), 2000, pp. 459-473
Authors:
Ambrosone, G
Bruno, G
Capezzuto, P
Cicala, G
Coscia, U
Citation: G. Ambrosone et al., Growth-etching competitive mechanism governing the structure and chemical composition of plasma-deposited silicon-based materials, PHIL MAG B, 80(4), 2000, pp. 487-496
Authors:
Ambrosone, G
Capezzuto, P
Catalanotti, S
Coscia, U
Mormone, S
Citation: G. Ambrosone et al., Optical, electrical and structural properties of hydrogenated amorphous Si-C alloys deposited by different hydrocarbon gas mixtures, PHIL MAG B, 80(4), 2000, pp. 497-506
Authors:
Perna, G
Capozzi, V
Lorusso, GF
Bruno, G
Losurdo, M
Capezzuto, P
Citation: G. Perna et al., Photoluminescence properties of homoepitaxial InP films grown by remote plasma MOCVD technique, SEMIC SCI T, 15(7), 2000, pp. 736-743
Authors:
Bruno, G
Capezzuto, P
Losurdo, M
Citation: G. Bruno et al., Real-time spectroscopic ellipsometry for III-V surface modifications - Hydrogen passivation, oxidation and nitridation by plasma processing, VACUUM, 57(2), 2000, pp. 189-199
Authors:
Losurdo, M
Rizzoli, R
Summonte, C
Cicala, G
Capezzuto, P
Bruno, G
Citation: M. Losurdo et al., Anatomy of mu c-Si thin films by plasma enhanced chemical vapor deposition: An investigation by spectroscopic ellipsometry, J APPL PHYS, 88(5), 2000, pp. 2408-2414
Authors:
Losurdo, M
Capezzuto, P
Bruno, G
Citation: M. Losurdo et al., Plasma cleaning and nitridation of sapphire (alpha-Al2O3) surfaces: New evidence from in situ real time ellipsometry, J APPL PHYS, 88(4), 2000, pp. 2138-2145
Authors:
Losurdo, M
Capezzuto, P
Bruno, G
Citation: M. Losurdo et al., Remote plasma metalorganic chemical vapor deposition of GaN epilayers, J PHYS IV, 9(P8), 1999, pp. 799-804
Authors:
Bruno, G
Capezzuto, P
Losurdo, M
Citation: G. Bruno et al., In situ real time ellipsometry for GaN remote plasma MOCVD technology, J PHYS IV, 9(P8), 1999, pp. 961-976
Authors:
Cicala, G
Shakhatov, VA
De Pascale, O
Capezzuto, P
Bruno, G
Citation: G. Cicala et al., Experimental investigation of powder formation in SiF4-H-2 and SiH4-H-2 r.f. discharges, PLASMA SOUR, 8(2), 1999, pp. 279-284
Authors:
Losurdo, M
Capezzuto, P
Bruno, G
Citation: M. Losurdo et al., In situ real time ellipsometry monitoring during GaN epilayers processing, MAT SCI E B, 59(1-3), 1999, pp. 150-154
Authors:
Losurdo, M
Capezzuto, P
Bruno, G
Leo, G
Irene, EA
Citation: M. Losurdo et al., Ill-V surface plasma nitridation: A challenge for III-V nitride epigrowth, J VAC SCI A, 17(4), 1999, pp. 2194-2201
Authors:
Cicala, G
Capezzuto, P
Bruno, G
Citation: G. Cicala et al., Plasma enhanced chemical vapor deposition of nanocrystalline silicon filmsfrom SiF4-H-2-He at low temperature, THIN SOL FI, 337(1-2), 1999, pp. 59-62
Authors:
Losurdo, M
Capezzuto, P
Bruno, G
Citation: M. Losurdo et al., Remote plasma MOCVD growth and processing of GaN: A study by real time ellipsometry, PHYS ST S-A, 176(1), 1999, pp. 733-738
Authors:
Losurdo, M
Capezzuto, P
Bruno, G
Irene, EA
Citation: M. Losurdo et al., Chemistry and kinetics of the GaN formation by plasma nitridation of GaAs:An in situ real-time ellipsometric study, PHYS REV B, 58(23), 1998, pp. 15878-15888
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