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Results:
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Results: 24
Authors:
Schuller, B
Carius, R
Lenk, S
Mantl, S
Citation: B. Schuller et al., Optical properties of beta-FeSi2 precipitate layers in silicon, OPT MATER, 17(1-2), 2001, pp. 121-124
Authors:
Shaposhnikov, VL
Ivanenko, LI
Migas, DB
Lenssen, D
Carius, R
Mantl, S
Borisenko, VE
Citation: Vl. Shaposhnikov et al., Optical properties of semiconducting RU2Si3, OPT MATER, 17(1-2), 2001, pp. 339-341
Authors:
Wang, S
Coffa, S
Carius, R
Buchal, C
Citation: S. Wang et al., Efficient electroluminescence from rare earth doped MOS diodes, MAT SCI E B, 81(1-3), 2001, pp. 102-104
Authors:
Schuller, B
Carius, R
Mantl, S
Citation: B. Schuller et al., Modification of beta-FeSi2 precipitate layers in silicon by hydrogen implantation, MICROEL ENG, 55(1-4), 2001, pp. 219-225
Authors:
Klein, S
Finger, F
Carius, R
Wagner, H
Stutzmann, M
Citation: S. Klein et al., Intrinsic amorphous and microcrystalline silicon by hot-wire-deposition for thin film solar cell applications, THIN SOL FI, 395(1-2), 2001, pp. 305-309
Authors:
Oyoshi, K
Lenssen, D
Carius, R
Mantl, S
Citation: K. Oyoshi et al., Study of structure and optical properties of beta-FeSi2 precipitates formed by ion-implantation of Fe+ in Si(100) and effects of co-implantation of Fe+ and Si+ in amorphous SiO2, THIN SOL FI, 381(2), 2001, pp. 194-201
Authors:
Oyoshi, K
Lenssen, D
Carius, R
Mantl, S
Citation: K. Oyoshi et al., Formation of beta-FeSi2 precipitates at the SiO2/Si interface by Fe+ ion implantation and their structural and optical properties, THIN SOL FI, 381(2), 2001, pp. 202-208
Authors:
Neto, ALB
Lambertz, A
Carius, R
Finger, F
Citation: Alb. Neto et al., Spin density and conductivity in thin silicon films upon transition from microcrystalline to amorphous growth, PHYS ST S-A, 186(1), 2001, pp. R4-R6
Authors:
Lenssen, D
Carius, R
Mantl, S
Birdwell, AG
Citation: D. Lenssen et al., Electrical and optical characterization of semiconducting Ru2Si3 films andsingle crystals, J APPL PHYS, 90(7), 2001, pp. 3347-3352
Authors:
Carius, R
Citation: R. Carius, Optical gap and photoluminescence properties of amorphous silicon alloys, PHIL MAG B, 80(4), 2000, pp. 741-753
Authors:
Vetterl, O
Finger, F
Carius, R
Hapke, P
Houben, L
Kluth, O
Lambertz, A
Muck, A
Rech, B
Wagner, H
Citation: O. Vetterl et al., Intrinsic microcrystalline silicon: A new material for photovoltaics, SOL EN MAT, 62(1-2), 2000, pp. 97-108
Authors:
Ross, C
Herion, J
Carius, R
Wagner, H
Citation: C. Ross et al., Nucleation and growth of low-temperature fine-crystalline silicon: a scanning probe microscopy and Raman spectroscopy study of the influence of hydrogen and different substrates, MAT SCI E B, 72(1), 2000, pp. 1-6
Authors:
Damasceno, JC
Camargo, SS
Freire, FL
Carius, R
Citation: Jc. Damasceno et al., Deposition of Si-DLC films with high hardness, low stress and high deposition rates, SURF COAT, 133, 2000, pp. 247-252
Authors:
Lenssen, D
Carius, R
Mesters, S
Guggi, D
Bay, HL
Mantl, S
Citation: D. Lenssen et al., Structural, electrical and optical characterization of semiconducting Ru2Si3, MICROEL ENG, 50(1-4), 2000, pp. 243-248
Authors:
Costa, AK
Camargo, SS
Achete, CA
Carius, R
Citation: Ak. Costa et al., Characterization of ultra-hard silicon carbide coatings deposited by RF magnetron sputtering, THIN SOL FI, 377, 2000, pp. 243-248
Authors:
Finger, F
Muller, J
Malten, C
Carius, R
Wagner, H
Citation: F. Finger et al., Electronic properties of microcrystalline silicon investigated by electronspin resonance and transport measurements, J NON-CRYST, 266, 2000, pp. 511-518
Authors:
Houben, L
Carius, R
Lundszien, D
Folsch, J
Finger, F
Luysberg, M
Wagner, H
Citation: L. Houben et al., Structural properties of microcrystalline silicon-germanium films, PHIL MAG L, 79(2), 1999, pp. 71-78
Authors:
Dasgupta, A
Saha, SC
Ray, S
Carius, R
Citation: A. Dasgupta et al., Substrate temperature: A critical parameter for the growth of microcrystalline silicon-carbon alloy thin films at low power, J MATER RES, 14(6), 1999, pp. 2554-2559
Authors:
Shengurov, VG
Svetlov, SP
Pavlov, DA
Khokhlov, AF
Krasilnic, ZF
Carius, R
Wagner, H
Citation: Vg. Shengurov et al., Visible luminescence of erbium-doped silicon films grown by sublimation molecular beam epitaxy with a potential applied to the substrate, IAN FIZ, 63(2), 1999, pp. 406-410
Authors:
Neto, ALB
Camargo, SS
Carius, R
Finger, F
Beyer, W
Citation: Alb. Neto et al., Annealing effects on near stoichiometric a-SiC : H films, SURF COAT, 121, 1999, pp. 395-400
Authors:
Wang, S
Amekura, H
Eckau, A
Carius, R
Buchal, C
Citation: S. Wang et al., Luminescence from Er and Tb implanted into MOS tunnel diodes, NUCL INST B, 148(1-4), 1999, pp. 481-485
Authors:
Muller, J
Finger, F
Carius, R
Wagner, H
Citation: J. Muller et al., Electron spin resonance investigation of electronic states in hydrogenatedmicrocrystalline silicon, PHYS REV B, 60(16), 1999, pp. 11666-11677
Authors:
Vetterl, O
Hapke, P
Houben, L
Finger, F
Carius, R
Wagner, H
Citation: O. Vetterl et al., Connection between hydrogen plasma treatment and etching of amorphous phase in the layer-by-layer technique with very high frequency plasma excitation, J APPL PHYS, 85(5), 1999, pp. 2991-2993
Authors:
Lenssen, D
Bay, HL
Mesters, S
Dieker, C
Guggi, D
Carius, R
Mantl, S
Citation: D. Lenssen et al., Growth and structural characterization of semiconducting Ru2Si3, J LUMINESC, 80(1-4), 1998, pp. 461-465
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