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Results: 1-10 |
Results: 10
The effect of In/N ratio on the optical quality and lasing threshold in GaxIn1-xAs1-yNy/GaAs laser structures
Authors: Potter, R Mazzucato, S Balkan, N Adams, MJ Chalker, PR Joyce, TB Bullough, TJ
Citation: R. Potter et al., The effect of In/N ratio on the optical quality and lasing threshold in GaxIn1-xAs1-yNy/GaAs laser structures, SUPERLATT M, 29(2), 2001, pp. 169-186
Embedded fibre Bragg grating sensors in advanced composite materials
Authors: Kuang, KSC Kenny, R Whelan, MP Cantwell, WJ Chalker, PR
Citation: Ksc. Kuang et al., Embedded fibre Bragg grating sensors in advanced composite materials, COMP SCI T, 61(10), 2001, pp. 1379-1387
Compositional variation in as-grown GaInNAs/GaAs quantum well structures
Authors: Chalker, PR Davock, H Thomas, S Joyce, TB Bullough, TJ Potter, RJ Balkan, N
Citation: Pr. Chalker et al., Compositional variation in as-grown GaInNAs/GaAs quantum well structures, J CRYST GR, 233(1-2), 2001, pp. 1-4
Investigation of electromechanical distortions in gallium nitride by reflectance anisotropy spectroscopy
Authors: Morrice, DE Farrell, T Joyce, TB Chalker, PR
Citation: De. Morrice et al., Investigation of electromechanical distortions in gallium nitride by reflectance anisotropy spectroscopy, DIAM RELAT, 9(3-6), 2000, pp. 460-463
Indium segregation in MOCVD InGaN layers studied by medium energy ion scattering
Authors: Chalker, PR Morrice, D Joyce, TB Noakes, TCQ Bailey, P Considine, L
Citation: Pr. Chalker et al., Indium segregation in MOCVD InGaN layers studied by medium energy ion scattering, DIAM RELAT, 9(3-6), 2000, pp. 520-523
Metalorganic molecular beam epitaxy of GaN and Al(Ga)N on GaAs(001) studied using laser reflectometry and reflectance anisotropy spectroscopy
Authors: Joyce, TB Chalker, PR Farrell, T
Citation: Tb. Joyce et al., Metalorganic molecular beam epitaxy of GaN and Al(Ga)N on GaAs(001) studied using laser reflectometry and reflectance anisotropy spectroscopy, J MAT S-M E, 10(8), 1999, pp. 585-588
Fabrication of aluminium nitride diamond and gallium nitride diamond SAW devices
Authors: Chalker, PR Joyce, TB Johnston, C Crossley, JAA Huddlestone, J Whitfield, MD Jackman, RB
Citation: Pr. Chalker et al., Fabrication of aluminium nitride diamond and gallium nitride diamond SAW devices, DIAM RELAT, 8(2-5), 1999, pp. 309-313
Optical reflectivity studies of GaN and AlN chemical beam epitaxy on GaAs(100)
Authors: Chalker, PR Joyce, TB Farrell, T
Citation: Pr. Chalker et al., Optical reflectivity studies of GaN and AlN chemical beam epitaxy on GaAs(100), DIAM RELAT, 8(2-5), 1999, pp. 373-376
Raman and reflection anisotropy spectroscopic studies of GaN and AlN growth on GaAs(100)
Authors: Chalker, PR Joyce, TB Farrell, T Johnston, C Crossley, A Eccles, J
Citation: Pr. Chalker et al., Raman and reflection anisotropy spectroscopic studies of GaN and AlN growth on GaAs(100), THIN SOL FI, 344, 1999, pp. 575-578
Wide bandgap semiconductor materials for high temperature electronics
Authors: Chalker, PR
Citation: Pr. Chalker, Wide bandgap semiconductor materials for high temperature electronics, THIN SOL FI, 344, 1999, pp. 616-622
Risultati: 1-10 |