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Results:
1-6
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Results: 6
Formation of porous silicon: an in situ investigation with high-resolutionX-ray diffraction
Authors:
Chamard, V Pichat, C Dolino, G
Citation:
V. Chamard et al., Formation of porous silicon: an in situ investigation with high-resolutionX-ray diffraction, EUR PHY J B, 21(2), 2001, pp. 185-190
Rinsing and drying studies of porous silicon by high resolution X-ray diffraction
Authors:
Chamard, V Pichat, C Dolino, G
Citation:
V. Chamard et al., Rinsing and drying studies of porous silicon by high resolution X-ray diffraction, SOL ST COMM, 118(3), 2001, pp. 135-139
X-ray diffraction investigation of n-type porous silicon
Authors:
Chamard, V Dolino, G
Citation:
V. Chamard et G. Dolino, X-ray diffraction investigation of n-type porous silicon, J APPL PHYS, 89(1), 2001, pp. 174-180
Structure and ordering of GaN quantum dot multilayers
Authors:
Chamard, V Metzger, TH Bellet-Amalric, E Daudin, B Adelmann, C Mariette, H Mula, G
Citation:
V. Chamard et al., Structure and ordering of GaN quantum dot multilayers, APPL PHYS L, 79(13), 2001, pp. 1971-1973
X-ray scattering study of porous silicon layers
Authors:
Chamard, V Dolino, G Stettner, J
Citation:
V. Chamard et al., X-ray scattering study of porous silicon layers, PHYSICA B, 283(1-3), 2000, pp. 135-138
Origin of a parasitic surface film on p(+) type porous silicon
Authors:
Chamard, V Dolino, G Muller, F
Citation:
V. Chamard et al., Origin of a parasitic surface film on p(+) type porous silicon, J APPL PHYS, 84(12), 1998, pp. 6659-6666
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