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Results:
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Results: 8
Authors:
Laursen, T
Chandrasekhar, D
Hervig, RL
Mayer, JW
Smith, DJ
Jasper, C
Citation: T. Laursen et al., Fabrication and characterization of C implantation standards for Si1-x-yGexCy alloys, J VAC SCI A, 19(6), 2001, pp. 2879-2883
Authors:
Chandrasekhar, D
Van Houten, B
Citation: D. Chandrasekhar et B. Van Houten, In vivo formation and repair of cyclobutane pyrimidine dimers and 6-4 photoproducts measured at the gene and nucleotide level in Escherichia coli, MUT RES-F M, 450(1-2), 2000, pp. 19-40
Authors:
Smith, DJ
Tsen, SCY
Chandrasekhar, D
Crozier, PA
Rujirawat, S
Brill, G
Chen, YP
Sporken, R
Sivananthan, S
Citation: Dj. Smith et al., Growth and characterization of CdTe/Si heterostructures - effect of substrate orientation, MAT SCI E B, 77(1), 2000, pp. 93-100
Authors:
Drucker, J
Zhang, YT
Chaparro, SA
Chandrasekhar, D
McCartney, MR
Smith, DJ
Citation: J. Drucker et al., Activated strain relief of Ge/Si(100) islands, SURF REV L, 7(5-6), 2000, pp. 527-531
Authors:
Chaparro, SA
Zhang, Y
Drucker, J
Chandrasekhar, D
Smith, DJ
Citation: Sa. Chaparro et al., Evolution of Ge/Si(100) islands: Island size and temperature dependence, J APPL PHYS, 87(5), 2000, pp. 2245-2254
Authors:
Khan, MA
Yang, JW
Simin, G
Gaska, R
Shur, MS
zur Loye, HC
Tamulaitis, G
Zukauskas, A
Smith, DJ
Chandrasekhar, D
Bicknell-Tassius, R
Citation: Ma. Khan et al., Lattice and energy band engineering in AlInGaN/GaN heterostructures, APPL PHYS L, 76(9), 2000, pp. 1161-1163
Authors:
Chaparro, SA
Drucker, J
Zhang, Y
Chandrasekhar, D
McCartney, MR
Smith, DJ
Citation: Sa. Chaparro et al., Strain-driven alloying in Ge/Si(100) coherent islands, PHYS REV L, 83(6), 1999, pp. 1199-1202
Authors:
Brill, G
Smith, DJ
Chandrasekhar, D
Gogotsi, Y
Prociuk, A
Sivananthan, S
Citation: G. Brill et al., Surfactant-mediated growth of Ge/Si(001) studied by Raman spectroscopy andTEM, J CRYST GR, 202, 1999, pp. 538-541
Risultati:
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