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Results:
1-9
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Results: 9
Authors:
Chang, LB
Liu, SS
Jeng, MJ
Citation: Lb. Chang et al., Etching selectivity and surface profile of GaN in the Ni, SiO2 and photoresist masks using an inductively coupled plasma, JPN J A P 1, 40(3A), 2001, pp. 1242-1243
Authors:
Jeng, MJ
Wang, HT
Chang, LB
Lin, RM
Citation: Mj. Jeng et al., Surface passivation using P2S5/(NH4)(2)S-x and hydrogen fluoride solutionson Ag/n-InAs and Ag/n-InSb Schottky diodes, JPN J A P 1, 40(2A), 2001, pp. 562-564
Authors:
Jeng, MJ
Wang, HT
Chang, LB
Cheng, YC
Lee, CM
Lin, RM
Citation: Mj. Jeng et al., Barrier height enhancement of Ni/N-type InP Schottky contact using a thin praseodymium interlayer, JPN J A P 2, 38(12A), 1999, pp. L1382-L1384
Authors:
Wang, HT
Chang, LB
Cheng, YC
Lin, YK
Hsu, CIG
Citation: Ht. Wang et al., Characterization of Pr2O3 added metals/GaAs Schottky diodes using X-ray Photoelectron Spectroscopy, CRYST RES T, 34(8), 1999, pp. 1017-1021
Authors:
Chang, LB
Wang, HT
Cheng, YC
Shong, TW
Lin, EK
Citation: Lb. Chang et al., Rare earth doped high barrier height Schottky devices, MICROELEC J, 30(6), 1999, pp. 521-526
Authors:
Jiaang, WT
Lin, HC
Tang, KH
Chang, LB
Tsai, YM
Citation: Wt. Jiaang et al., The study of the kinetics of intramolecular radical cyclizations of acylsilanes via the intramolecular competition method, J ORG CHEM, 64(2), 1999, pp. 618-628
Authors:
Chang, LB
Wang, HT
Cheng, YC
Shong, TW
Lin, EK
Citation: Lb. Chang et al., Praseodymium added GaAs liquid phase epitaxy and its Schottky diode application, J CRYST GR, 199, 1999, pp. 1092-1097
Authors:
Jeng, MJ
Wang, HT
Chang, LB
Cheng, YC
Chou, ST
Citation: Mj. Jeng et al., Barrier height enhancement of Ag/n-GaAs and Ag/n-InP Schottky diodes prepared by P2S5/(NH4)(2)S-x and HF treatments, J APPL PHYS, 86(11), 1999, pp. 6261-6263
Authors:
Lin, JP
Hwu, MJ
Chang, LB
Citation: Jp. Lin et al., Improvement of Al/GaAs Schottky junction characteristics using a thin praseodymium interlayer, JPN J A P 2, 37(12A), 1998, pp. L1437-L1439
Risultati:
1-9
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