AAAAAA
Results:
1-8
|
Results: 8
Authors:
Chavarkar, P
Mishra, U
Citation: P. Chavarkar et U. Mishra, Field effect transistors: FETs AND HEMTs, THIN FILM, 28, 2001, pp. 71-145
Authors:
Mathis, SK
Chavarkar, P
Andrews, AM
Mishra, UK
Speck, JS
Citation: Sk. Mathis et al., Strain relaxation of InGaAs by lateral oxidation of AlAs, J VAC SCI B, 18(4), 2000, pp. 2066-2071
Authors:
Chavarkar, P
Mathis, SK
Zhao, L
Keller, S
Speck, JS
Mishra, UK
Citation: P. Chavarkar et al., Strain relaxation in InGaAs lattice engineered substrates, J ELEC MAT, 29(7), 2000, pp. 944-949
Authors:
Mathis, SK
Chavarkar, P
Andrews, AM
Mishra, UK
Speck, JS
Citation: Sk. Mathis et al., Reactive removal of misfit dislocations from InGaAs on GaAs by lateral oxidation, APPL PHYS L, 77(6), 2000, pp. 845-847
Authors:
Chavarkar, P
Mishra, UK
Mathis, SK
Speck, JS
Citation: P. Chavarkar et al., Effect of Sb composition on lateral oxidation rates in AlAs1-xSbx, APPL PHYS L, 76(10), 2000, pp. 1291-1293
Authors:
Nagra, AS
Jerphagnon, O
Chavarkar, P
VanBlaricum, M
York, RA
Citation: As. Nagra et al., Indirect optical control of microwave circuits using monolithic optically variable capacitors, IEEE MICR T, 47(7), 1999, pp. 1365-1372
Authors:
Chavarkar, P
Zhao, L
Keller, S
Fisher, A
Zheng, C
Speck, JS
Mishra, UK
Citation: P. Chavarkar et al., Strain relaxation of InxGa1-xAs during lateral oxidation of underlying AlAs layers, APPL PHYS L, 75(15), 1999, pp. 2253-2255
Authors:
Xu, MG
Dell, JM
Siliquini, JF
Chavarkar, P
Citation: Mg. Xu et al., Near band-edge field-dependent absorption coefficient and refractive indexdetermined by photocurrent and transmittance measurements, APPL OPTICS, 38(24), 1999, pp. 5127-5132
Risultati:
1-8
|