Authors: Dai, JY Ong, KK Chi, DZ Liang, MH Leong, KC Chan, L Lahiri, SK

Citation: Jy. Dai et al., Defects in annealed 1.5 MeV boron implanted p-type silicon, J ELEC MAT, 30(7), 2001, pp. 850-854

Authors: Chi, DZ Mangelinck, D Lahiri, SK Lee, PS Pey, KL

Citation: Dz. Chi et al., Comparative study of current-voltage characteristics of Ni and Ni(Pt)-alloy silicided p(+)/n diodes, APPL PHYS L, 78(21), 2001, pp. 3256-3258

Authors: Chi, DZ Mangelinck, D Dai, JY Lahiri, SK Pey, KL Ho, CS

Citation: Dz. Chi et al., Nickel-platinum alloy monosilicidation-induced defects in n-type silicon, APPL PHYS L, 76(23), 2000, pp. 3385-3387

Authors: Gonzalez, CE Sharma, SC Hozhabri, N Chi, DZ Ashok, S

Citation: Ce. Gonzalez et al., Near-surface defects in hydrogen-plasma-treated boron-doped silicon studied by positron beam spectroscopy, APPL PHYS A, 68(6), 1999, pp. 643-645

Authors: Chi, DZ Ashok, S Theodore, D

Citation: Dz. Chi et al., Electrically active defects in surface pre-amorphized Si under rapid thermal anneal and their removal by concurrent titanium silicidation, APPL PHYS L, 75(24), 1999, pp. 3802-3804