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Results: 1-8 |
Results: 8
Beryllium-implanted P-type GaN with high carrier concentration
Authors: Yu, CC Chu, CF Tsai, JY Lin, CF Lan, WH Chiang, CI Wang, SC
Citation: Cc. Yu et al., Beryllium-implanted P-type GaN with high carrier concentration, JPN J A P 2, 40(5A), 2001, pp. L417-L419
Structure study of GaN : Mg films by X-ray absorption near-edge structure spectroscopy
Authors: Pan, YC Wang, SF Lee, WH Lin, WC Chiang, CI Chang, H Hsieh, HH Chen, JM Lin, DS Lee, MC Chen, WK Chen, WH
Citation: Yc. Pan et al., Structure study of GaN : Mg films by X-ray absorption near-edge structure spectroscopy, SOL ST COMM, 117(10), 2001, pp. 577-582
Au/AuBe/Cr contact to p-ZnTe
Authors: Chang, SJ Chen, WR Su, YK Chen, JF Lan, WH Chiang, CI Lin, WJ Cherng, YT Liu, CH
Citation: Sj. Chang et al., Au/AuBe/Cr contact to p-ZnTe, ELECTR LETT, 37(5), 2001, pp. 321-322
Gallium K-edge x-ray absorption study on Mg-doped GaN
Authors: Pan, YC Wang, SF Lee, WH Lee, MC Chen, WK Chen, WH Jang, LY Lee, JF Chiang, CI Chang, H Wu, KT Lin, DS
Citation: Yc. Pan et al., Gallium K-edge x-ray absorption study on Mg-doped GaN, APPL PHYS L, 78(1), 2001, pp. 31-33
Electrical characterization of isoelectronic In-doping effects in GaN films grown by metalorganic vapor phase epitaxy
Authors: Chung, HM Chuang, WC Pan, YC Tsai, CC Lee, MC Chen, WH Chen, WK Chiang, CI Lin, CH Chang, H
Citation: Hm. Chung et al., Electrical characterization of isoelectronic In-doping effects in GaN films grown by metalorganic vapor phase epitaxy, APPL PHYS L, 76(7), 2000, pp. 897-899
A high-temperature thermodynamic model for metalorganic vapor phase epitaxial growth of InGaN
Authors: Ou, J Pan, YC Lee, WH Shu, CK Lin, HC Lee, MC Chen, WH Chiang, CI Chang, H Chen, WK
Citation: J. Ou et al., A high-temperature thermodynamic model for metalorganic vapor phase epitaxial growth of InGaN, JPN J A P 1, 38(9A), 1999, pp. 4958-4961
Influence of sapphire nitridation on properties of indium nitride preparedby metalorganic vapor phase epitaxy
Authors: Pan, YC Lee, WH Shu, CK Lin, HC Chiang, CI Chang, H Lin, DS Lee, MC Chen, WK
Citation: Yc. Pan et al., Influence of sapphire nitridation on properties of indium nitride preparedby metalorganic vapor phase epitaxy, JPN J A P 1, 38(2A), 1999, pp. 645-648
Growth of wurtzite GaN on (001)GaAs substrates at low temperature by atomic layer epitaxy
Authors: Huang, SC Wang, HY Hsu, CJ Gong, JR Chiang, CI Tu, SL Chang, H
Citation: Sc. Huang et al., Growth of wurtzite GaN on (001)GaAs substrates at low temperature by atomic layer epitaxy, J MAT SCI L, 17(15), 1998, pp. 1281-1285
Risultati: 1-8 |