Authors:
Kimura, Y
Ito, A
Miyachi, M
Takahashi, H
Watanabe, A
Ota, H
Ito, N
Tanabe, T
Sonobe, M
Chikuma, K
Citation: Y. Kimura et al., Optical gain and optical internal loss of GaN-based laser diodes measured by variable stripe length method with laser processing, JPN J A P 2, 40(10B), 2001, pp. L1103-L1106
Citation: A. Onoe et al., Epitaxial growth of orientation-controlled KNbO3 crystal films on MgO using KTaxNb1-xO3 intermediate layer by metalorganic chemical vapor deposition (vol 78, pg 49, 2001), APPL PHYS L, 79(8), 2001, pp. 1217-1217
Citation: A. Onoe et al., Epitaxial growth of orientation-controlled KNbO3 crystal films on MgO using KTaxNb1-xO3 intermediate layer by metalorganic chemical vapor deposition, APPL PHYS L, 78(1), 2001, pp. 49-51
Citation: A. Onoe et K. Chikuma, Fabrication of periodic domain-inversion in X-cut LiTaO3 by heat treatmenttechnique in an electric field, JPN J A P 1, 39(6A), 2000, pp. 3549-3554
Authors:
Takahashi, H
Ito, A
Tanaka, T
Watanabe, A
Ota, H
Chikuma, K
Citation: H. Takahashi et al., Effect of intentionally formed 'V-defects' on the emission efficiency of GaInN single quantum well, JPN J A P 2, 39(6B), 2000, pp. L569-L571
Authors:
Miyachi, M
Ota, H
Kimura, Y
Watanabe, A
Tanaka, T
Takahashi, H
Chikuma, K
Citation: M. Miyachi et al., GaN-based laser diodes processed by annealing with minority-carrier injection, JPN J A P 2, 38(11A), 1999, pp. L1237-L1239
Authors:
Watanabe, A
Takahashi, H
Tanaka, T
Ota, H
Chikuma, K
Amano, H
Kashima, T
Nakamura, R
Akasaki, I
Citation: A. Watanabe et al., Correlation between dislocation density and the macroscopic properties of GaN grown by metalorganic vapor phase epitaxy, JPN J A P 2, 38(10B), 1999, pp. L1159-L1162