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Results: 1-8 |
Results: 8
Sidewall-angle effect on the bottom etch profile in SiO2 etching using a CF4 plasma
Authors: Lee, GR Cho, BO Hwang, SW Moon, SH
Citation: Gr. Lee et al., Sidewall-angle effect on the bottom etch profile in SiO2 etching using a CF4 plasma, J VAC SCI B, 19(1), 2001, pp. 172-178
Spectroscopic study of plasma using zirconium tetra-tert-butoxide for the plasma enhanced chemical vapor deposition of zirconium oxide
Authors: Cho, BO Lao, S Sha, L Chang, JP
Citation: Bo. Cho et al., Spectroscopic study of plasma using zirconium tetra-tert-butoxide for the plasma enhanced chemical vapor deposition of zirconium oxide, J VAC SCI A, 19(6), 2001, pp. 2751-2761
Angular dependence of the redeposition rates during SiO2 etching in a CF4 plasma
Authors: Cho, BO Hwang, SW Lee, GR Moon, SH
Citation: Bo. Cho et al., Angular dependence of the redeposition rates during SiO2 etching in a CF4 plasma, J VAC SCI A, 19(3), 2001, pp. 730-735
Direct pattern etching for micromachining applications without the use of a resist mask
Authors: Cho, BO Ryu, JH Hwang, SW Lee, GR Moon, SH
Citation: Bo. Cho et al., Direct pattern etching for micromachining applications without the use of a resist mask, J VAC SCI B, 18(6), 2000, pp. 2769-2773
Angular dependence of SiO2 etching in a fluorocarbon plasma
Authors: Cho, BO Hwang, SW Lee, GR Moon, SH
Citation: Bo. Cho et al., Angular dependence of SiO2 etching in a fluorocarbon plasma, J VAC SCI A, 18(6), 2000, pp. 2791-2798
Fabrication method for surface gratings using a Faraday cage in a conventional plasma etching apparatus
Authors: Cho, BO Hwang, SW Ryu, JH Kim, IW Moon, SH
Citation: Bo. Cho et al., Fabrication method for surface gratings using a Faraday cage in a conventional plasma etching apparatus, EL SOLID ST, 2(3), 1999, pp. 129-130
More vertical etch profile using a Faraday cage in plasma etching
Authors: Cho, BO Hwang, SW Ryu, JH Moon, SH
Citation: Bo. Cho et al., More vertical etch profile using a Faraday cage in plasma etching, REV SCI INS, 70(5), 1999, pp. 2458-2461
Expression of the Si etch rate in a CF4 plasma with four internal process variables
Authors: Cho, BO Hwang, SW Kim, IW Moon, SH
Citation: Bo. Cho et al., Expression of the Si etch rate in a CF4 plasma with four internal process variables, J ELCHEM SO, 146(1), 1999, pp. 350-358
Risultati: 1-8 |