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Results:
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Results: 23
Authors:
Park, CJ
Noh, HR
Kim, BG
Kim, SY
Jung, IU
Cho, CR
Han, JS
Citation: Cj. Park et al., Evaluation of acid deposition in Korea, WATER A S P, 130(1-4), 2001, pp. 445-450
Authors:
Jeong, HT
Cho, YC
Cho, CR
Jeong, SY
Citation: Ht. Jeong et al., Group-theoretical analysis for the ferroelastic domain walls, J PHYS JPN, 70(9), 2001, pp. 2588-2592
Authors:
Jeong, HT
Cho, YC
Cho, CR
Jeong, SY
Citation: Ht. Jeong et al., Consideration on domain walls orientations in CsPbCl3 ferroelastic crystalin the monoclinic phase, J PHYS JPN, 70(3), 2001, pp. 717-722
Authors:
Abadei, S
Gevorgian, S
Cho, CR
Grishin, A
Andreasson, J
Lindback, T
Citation: S. Abadei et al., DC field dependent properties of Na0.5K0.5NbO3/SiO2/Si structures at millimeter-wave frequencies, APPL PHYS L, 78(13), 2001, pp. 1900-1902
Authors:
Suda, Y
Kawasaki, H
Cho, CR
Grishin, A
Rao, KV
Citation: Y. Suda et al., Characterization of crystalline TiC films grown by pulsed Nd : YAG laser deposition, JPN J A P 1, 39(7B), 2000, pp. 4575-4576
Authors:
Cho, CR
Grishin, A
Moon, BM
Citation: Cr. Cho et al., Ferroelectric Na0.5K0.5NbO3 thin films by pulsed laser deposition, INTEGR FERR, 31(1-4), 2000, pp. 35-45
Authors:
Cho, CR
Francis, LF
Citation: Cr. Cho et Lf. Francis, Electromechanical properties and acoustic response of integrated PZT thin films, J MAT SCI L, 19(16), 2000, pp. 1477-1479
Authors:
Cho, CR
Citation: Cr. Cho, Surface chemical bonding states and ferroelectricity of Pb(Zr0.52Ti0.48)O-3 thin films, CRYST RES T, 35(1), 2000, pp. 77-86
Authors:
Cho, CR
Grishin, A
Citation: Cr. Cho et A. Grishin, Background oxygen effects on pulsed laser deposited Na0.5K0.5NbO3 films: From superparaelectric state to ferroelectricity, J APPL PHYS, 87(9), 2000, pp. 4439-4448
Authors:
Cho, CR
Koh, JH
Grishin, A
Abadei, S
Gevorgian, S
Citation: Cr. Cho et al., Na0.5K0.5NbO3/SiO2/Si thin film varactor, APPL PHYS L, 76(13), 2000, pp. 1761-1763
Authors:
Lee, WJ
Shin, CH
Cho, CR
Lyu, JS
Kim, BW
Yu, BG
Cho, KI
Citation: Wj. Lee et al., Electrical properties of SrBi2Ta2O9/insulator/Si structures with various insulators, JPN J A P 1, 38(4A), 1999, pp. 2039-2043
Authors:
Cho, CR
Lee, WJ
Yu, BG
Kim, BW
Park, KB
Citation: Cr. Cho et al., Structural and ferroelectric properties of sol-gel deposited Nb-doped Pb[(Sc1/2Nb1/2)(0.57)Ti-0.43]O-3 thin films, JPN J A P 1, 38(3A), 1999, pp. 1459-1465
Authors:
Cho, CR
Francis, LF
Jang, MS
Citation: Cr. Cho et al., Piezoelectric properties and acoustic wave detection of Pb(Zr0.52Ti0.48)O-3 thin films for microelectromechanical systems sensor, JPN J A P 2, 38(7A), 1999, pp. L751-L754
Authors:
Lee, WJ
Cho, CR
Kim, SH
You, IK
Kim, BW
Yu, BG
Shin, CH
Lee, HC
Citation: Wj. Lee et al., Etching behavior and damage recovery of SrBi2Ta2O9 thin films, JPN J A P 2, 38(12A), 1999, pp. L1428-L1431
Authors:
Cho, CR
Citation: Cr. Cho, Heteroepitaxial growth and switching behaviors of PZT(53/47) films on LaNiO3-deposited LaAlO3 and SrTiO3 substrates, MAT SCI E B, 64(2), 1999, pp. 113-117
Authors:
Yarykin, N
Cho, CR
Zuhr, R
Rozgonyi, G
Citation: N. Yarykin et al., In-situ studies of point-defect complexes in silicon implanted with heavy MeV ions, PHYSICA B, 274, 1999, pp. 485-488
Authors:
Yu, BG
Lee, WJ
Cho, CR
Shin, CH
Kim, BW
Citation: Bg. Yu et al., The effect of annealing temperature on electrical properties of SrBi2Ta2O9/insulators/Si(MFIS) structure for NDRO-type FRAM devices, CRYST RES T, 34(9), 1999, pp. 1197-1204
Authors:
Cho, CR
Francis, LF
Polla, DL
Citation: Cr. Cho et al., Ferroelectric properties of sol-gel deposited Pb(Zr,Ti)O-3/LaNiO3 thin films on single crystal and platinized-Si substrates, MATER LETT, 38(2), 1999, pp. 125-130
Authors:
Cho, CR
Drinkwater, DE
Francis, LF
Polla, DL
Citation: Cr. Cho et al., Properties of Nb-doped lead scandium niobate titanate thin films prepared by a sol-gel method, MATER LETT, 38(2), 1999, pp. 136-140
Authors:
Cho, CR
Lee, WJ
Yu, BG
Kim, BW
Citation: Cr. Cho et al., Dielectric and ferroelectric response as a function of annealing temperature and film thickness of sol-gel deposited Pb(Zr0.52Ti0.48)O-3 thin film, J APPL PHYS, 86(5), 1999, pp. 2700-2711
Authors:
Yarykin, N
Cho, CR
Rozgonyi, GA
Zuhr, RA
Citation: N. Yarykin et al., The impact of in situ photoexcitation on the formation of vacancy-type complexes in silicon implanted at 85 and 295 K, APPL PHYS L, 75(2), 1999, pp. 241-243
Authors:
Cho, CR
Grishin, A
Citation: Cr. Cho et A. Grishin, Self-assembling ferroelectric Na0.5K0.5NbO3 thin films by pulsed-laser deposition, APPL PHYS L, 75(2), 1999, pp. 268-270
Authors:
Cho, CR
Yarykin, N
Brown, RA
Kononchuk, O
Rozgonyi, GA
Zuhr, RA
Citation: Cr. Cho et al., Evolution of deep-level centers in p-type silicon following ion implantation at 85 K, APPL PHYS L, 74(9), 1999, pp. 1263-1265
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