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Results:
1-19
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Results: 19
Authors:
Banerjee, S
Chatty, K
Chow, TP
Gutmann, RJ
Citation: S. Banerjee et al., Improved high-voltage lateral RESURF MOSFETs in 4H-SiC, IEEE ELEC D, 22(5), 2001, pp. 209-211
Authors:
Chatty, K
Chow, TP
Gutmann, RJ
Arnold, E
Alok, D
Citation: K. Chatty et al., Accumulation-layer electron mobility in n-channel 4H-SiC MOSFETs, IEEE ELEC D, 22(5), 2001, pp. 212-214
Authors:
Tang, Y
Fedison, JB
Chow, TP
Citation: Y. Tang et al., An implanted-emitter 4H-SiC bipolar transistor with high current gain, IEEE ELEC D, 22(3), 2001, pp. 119-120
Authors:
Fedison, JB
Ramungul, N
Chow, TP
Ghezzo, M
Kretchmer, JW
Citation: Jb. Fedison et al., Electrical characteristics of 4.5 kV implanted anode 4H-SiC P-I-N junctionrectifiers, IEEE ELEC D, 22(3), 2001, pp. 130-132
Authors:
Zhu, L
Li, Z
Chow, TP
Citation: L. Zhu et al., N-type doping of 4H-SiC with phosphorus co-implanted with C or Si, J ELEC MAT, 30(7), 2001, pp. 891-894
Authors:
Banerjee, S
Chatty, K
Chow, TP
Gutmann, RJ
Citation: S. Banerjee et al., Effect of processing conditions on inversion layer mobility and interface state density in 4H-SiC MOSFETs, J ELEC MAT, 30(3), 2001, pp. 253-259
Authors:
Leung, WK
Chow, TP
Ng, EKW
Chan, FKL
Chung, SCS
Sung, JJY
Citation: Wk. Leung et al., Validation of a new immunoblot assay for the diagnosis of Helicobacter pylori in the Asian population, ALIM PHARM, 15(3), 2001, pp. 423-428
Authors:
Chatty, K
Banerjee, S
Chow, TP
Gutmann, RJ
Citation: K. Chatty et al., High-voltage lateral RESURF MOSFET's on 4H-SiC, IEEE ELEC D, 21(7), 2000, pp. 356-358
Authors:
Khemka, V
Ananthan, V
Chow, TP
Citation: V. Khemka et al., A fully planarized 4H-SiC trench MOS barrier Schottky (TMBS) rectifier, IEEE ELEC D, 21(6), 2000, pp. 286-288
Authors:
Chow, TP
Khemka, V
Fedison, J
Ramungul, N
Matocha, K
Tang, Y
Gutmann, RJ
Citation: Tp. Chow et al., SiC and GaN bipolar power devices, SOL ST ELEC, 44(2), 2000, pp. 277-301
Authors:
Elasser, A
Ghezzo, M
Krishnamurthy, N
Kretchmer, J
Clock, AW
Brown, DM
Chow, TP
Citation: A. Elasser et al., Switching characteristics of silicon carbide power PiN diodes, SOL ST ELEC, 44(2), 2000, pp. 317-323
Authors:
Gao, Y
Tang, Y
Hoshi, M
Chow, TP
Citation: Y. Gao et al., Improved ohmic contact on n-type 4H-SiC, SOL ST ELEC, 44(10), 2000, pp. 1875-1878
Authors:
Gupta, RN
Min, WG
Chow, TP
Citation: Rn. Gupta et al., A novel planarized, silicon trench sidewall oxide-merged p-i-n Schottky (TSOX-MPS) rectifier, IEEE ELEC D, 20(12), 1999, pp. 627-629
Authors:
Chatty, K
Khemka, V
Chow, TP
Gutmann, RJ
Citation: K. Chatty et al., Re-oxidation characteristics of oxynitrides on 3C- and 4H-SiC, J ELEC MAT, 28(3), 1999, pp. 161-166
Authors:
Khemka, V
Patel, R
Ramungul, N
Chow, TP
Ghezzo, M
Kretchmer, J
Citation: V. Khemka et al., Characterization of phosphorus implantation in 4H-SiC, J ELEC MAT, 28(3), 1999, pp. 167-174
Authors:
Khemka, V
Patel, R
Chow, TP
Gutmann, RJ
Citation: V. Khemka et al., Design considerations and experimental analysis for silicon carbide power rectifiers, SOL ST ELEC, 43(10), 1999, pp. 1945-1962
Authors:
Ramungul, N
Khemka, V
Zheng, YP
Patel, R
Chow, TP
Citation: N. Ramungul et al., 6H-SiC P+N junctions fabricated by beryllium implantation, IEEE DEVICE, 46(3), 1999, pp. 465-470
Authors:
Ramungul, N
Chow, TP
Citation: N. Ramungul et Tp. Chow, Current-controlled negative resistance (CCNR) in SiCP-i-N rectifiers, IEEE DEVICE, 46(3), 1999, pp. 493-496
Authors:
Yang, GR
Zhao, YP
Hu, YZ
Chow, TP
Gutmann, RJ
Citation: Gr. Yang et al., XPS and AFM study of chemical mechanical polishing of silicon nitride, THIN SOL FI, 333(1-2), 1998, pp. 219-223
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