Authors: Chumbes, EM Smart, JA Prunty, T Shealy, JR

Citation: Em. Chumbes et al., Microwave performance of AlGaN/GaN metal insulator semiconductor field effect transistors on sapphire substrates, IEEE DEVICE, 48(3), 2001, pp. 416-419

Authors: Chumbes, EM Schremer, AT Smart, JA Yang, Y MacDonald, NC Hogue, D Komiak, JJ Lichwalla, SJ Leoni, RE Shealy, JR

Citation: Em. Chumbes et al., AlGaN/GaN high electron mobility transistors on Si(111) substrates, IEEE DEVICE, 48(3), 2001, pp. 420-426

Authors: Eastman, LF Tilak, V Smart, J Green, BM Chumbes, EM Dimitrov, R Kim, H Ambacher, OS Weimann, N Prunty, T Murphy, M Schaff, WJ Shealy, JR

Citation: Lf. Eastman et al., Undoped AlGaN/GaN HEMTs for microwave power amplification, IEEE DEVICE, 48(3), 2001, pp. 479-485

Authors: Green, BM Chu, KK Chumbes, EM Smart, JA Shealy, JR Eastman, LF

Citation: Bm. Green et al., The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMT's, IEEE ELEC D, 21(6), 2000, pp. 268-270

Authors: Smart, JA Chumbes, EM Schremer, AT Shealy, JR

Citation: Ja. Smart et al., Single step process for epitaxial lateral overgrowth of GaN on SiC and sapphire substrates, APPL PHYS L, 75(24), 1999, pp. 3820-3822