AAAAAA

   
Results: 1-9 |
Results: 9
Force constant change upon isotopic substitution of hydrogen for deuterium- art. no. 075201
Authors: Biernacki, SW Clerjaud, B
Citation: Sw. Biernacki et B. Clerjaud, Force constant change upon isotopic substitution of hydrogen for deuterium- art. no. 075201, PHYS REV B, 6307(7), 2001, pp. 5201
Temperature dependence of electrical properties of gallium-nitride bulk single crystals doped with Mg and their evolution with annealing
Authors: Litwin-Staszewska, E Suski, T Piotrzkowski, R Grzegory, I Bockowski, M Robert, JL Konczewicz, L Wasik, D Kaminska, E Cote, D Clerjaud, B
Citation: E. Litwin-staszewska et al., Temperature dependence of electrical properties of gallium-nitride bulk single crystals doped with Mg and their evolution with annealing, J APPL PHYS, 89(12), 2001, pp. 7960-7965
Infrared spectroscopy of Mg-H local vibrational mode in GaN with polarizedlight
Authors: Clerjaud, B Cote, D Lebkiri, A Naud, C Baranowski, JM Pakula, K Wasik, D Suski, T
Citation: B. Clerjaud et al., Infrared spectroscopy of Mg-H local vibrational mode in GaN with polarizedlight, PHYS REV B, 61(12), 2000, pp. 8238-8241
Electrical and optical characterisation of vanadium in 4H and 6H-SiC
Authors: Lauer, V Bremond, G Souifi, A Guillot, G Chourou, K Anikin, M Madar, R Clerjaud, B Naud, C
Citation: V. Lauer et al., Electrical and optical characterisation of vanadium in 4H and 6H-SiC, MAT SCI E B, 61-2, 1999, pp. 248-252
Complexes of group-VI donors with hydrogen in GaP
Authors: Clerjaud, B Cote, D Ulrici, W
Citation: B. Clerjaud et al., Complexes of group-VI donors with hydrogen in GaP, PHYSICA B, 274, 1999, pp. 803-806
Local-vibrational-mode absorption of interstitial oxygen in GaP
Authors: Ulrici, W Clerjaud, B Cote, D
Citation: W. Ulrici et al., Local-vibrational-mode absorption of interstitial oxygen in GaP, PHYSICA B, 274, 1999, pp. 807-810
Electrical properties of GaN bulk single crystals doped with Mg
Authors: Litwin-Staszewska, E Suski, T Grzegory, I Porowski, S Perlin, P Robert, JL Contreras, S Wasik, D Witowski, A Cote, D Clerjaud, B
Citation: E. Litwin-staszewska et al., Electrical properties of GaN bulk single crystals doped with Mg, PHYS ST S-B, 216(1), 1999, pp. 567-570
High-frequency hydrogen-related infrared modes in silicon grown in a hydrogen atmosphere
Authors: Pajot, B Clerjaud, B Xu, ZJ
Citation: B. Pajot et al., High-frequency hydrogen-related infrared modes in silicon grown in a hydrogen atmosphere, PHYS REV B, 59(11), 1999, pp. 7500-7506
Acceptor neutralisation by hydrogen in GaN and wide band gap II-VI materials
Authors: Clerjaud, B Cote, D Lebkiri, A
Citation: B. Clerjaud et al., Acceptor neutralisation by hydrogen in GaN and wide band gap II-VI materials, PHYS ST S-B, 210(2), 1998, pp. 497-506
Risultati: 1-9 |