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Results:
1-7
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Results: 7
Authors:
Cong, D
Fong, AKY
Lee, R
Pang, KS
Citation: D. Cong et al., Absorption of benzoic acid in segmental regions of the vascularly perfusedrat small intestine preparation, DRUG META D, 29(12), 2001, pp. 1539-1547
Authors:
Kroger, R
Eizenberg, M
Cong, D
Yoshida, N
Chen, LY
Ramaswami, S
Carl, D
Citation: R. Kroger et al., Influence of diffusion barriers on the nucleation and growth of CVD Cu forinterconnect applications, MICROEL ENG, 50(1-4), 2000, pp. 375-381
Authors:
Voss, S
Gandikota, S
Chen, LY
Tao, R
Cong, D
Duboust, A
Yoshida, N
Ramaswami, S
Citation: S. Voss et al., Chemical studies of CVD Cu deposited on Ta and TaN barriers under various process conditions, MICROEL ENG, 50(1-4), 2000, pp. 501-508
Authors:
Gandikota, S
Voss, S
Tao, R
Duboust, A
Cong, D
Chen, LY
Ramaswami, S
Carl, D
Citation: S. Gandikota et al., Adhesion studies of CVD copper metallization, MICROEL ENG, 50(1-4), 2000, pp. 547-553
Authors:
Cong, D
Doherty, M
Pang, KS
Citation: D. Cong et al., A new physiologically based, segregated-flow model to explain route-dependent intestinal metabolism, DRUG META D, 28(2), 2000, pp. 224-235
Authors:
Kroger, R
Eizenberg, M
Rabkin, E
Cong, D
Chen, L
Citation: R. Kroger et al., The role of kinetics in the nucleation and void formation in copper films produced by chemical vapor deposition, J APPL PHYS, 88(4), 2000, pp. 1867-1872
Authors:
Kroger, R
Eizenberg, M
Cong, D
Yoshida, N
Chen, LY
Ramaswami, S
Carl, D
Citation: R. Kroger et al., Properties of copper films prepared by chemical vapor deposition for advanced metallization of microelectronic devices, J ELCHEM SO, 146(9), 1999, pp. 3248-3254
Risultati:
1-7
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