Login
|
New Account
AAAAAA
ITA
ENG
Results:
1-3
|
Results: 3
Athermal annealing of low-energy boron implants in silicon
Authors:
Donnelly, DW Covington, BC Grun, J Fischer, RP Peckerar, M Felix, CL
Citation:
Dw. Donnelly et al., Athermal annealing of low-energy boron implants in silicon, APPL PHYS L, 78(14), 2001, pp. 2000-2002
Front end of line considerations far progression beyond the 100 nm node ultrashallow junction requirements
Authors:
Cleavelin, CR Covington, BC Larson, LA
Citation:
Cr. Cleavelin et al., Front end of line considerations far progression beyond the 100 nm node ultrashallow junction requirements, J VAC SCI B, 18(1), 2000, pp. 346-353
Athermal annealing of phosphorus-ion-implanted silicon
Authors:
Grun, J Fischer, RP Peckerar, M Felix, CL Covington, BC DeSisto, WJ Donnelly, DW Ting, A Manka, CK
Citation:
J. Grun et al., Athermal annealing of phosphorus-ion-implanted silicon, APPL PHYS L, 77(13), 2000, pp. 1997-1999
Risultati:
1-3
|