Authors:
Krames, MR
Ochiai-Holcomb, M
Hofler, GE
Carter-Coman, C
Chen, EI
Tan, IH
Grillot, P
Gardner, NF
Chui, HC
Huang, JW
Stockman, SA
Kish, FA
Craford, MG
Tan, TS
Kocot, CP
Hueschen, M
Posselt, J
Loh, B
Sasser, G
Collins, D
Citation: Mr. Krames et al., High-power truncated-inverted-pyramid (AlxGa1-x)(0.5)In0.5P/GaP light-emitting diodes exhibiting > 50% external quantum efficiency, APPL PHYS L, 75(16), 1999, pp. 2365-2367