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Results:
1-4
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Results: 4
Surface corrugation of In0.15Ga0.85As layers grown on (553)B-oriented GaAssubstrates by molecular beam epitaxy
Authors:
Yan, FW Zhang, WJ Zhang, RG Cui, LQ Liang, CG Liu, SY
Citation:
Fw. Yan et al., Surface corrugation of In0.15Ga0.85As layers grown on (553)B-oriented GaAssubstrates by molecular beam epitaxy, J CRYST GR, 224(1-2), 2001, pp. 47-51
Formation and characterization of (553)B In0.15Ga0.85As/GaAs quantum wire structure
Authors:
Yan, FW Zhang, WJ Zhang, RG Cui, LQ Liang, CG Liu, SY
Citation:
Fw. Yan et al., Formation and characterization of (553)B In0.15Ga0.85As/GaAs quantum wire structure, J APPL PHYS, 90(3), 2001, pp. 1403-1406
Structural and photoelectric studies on double barrier quantum well infrared detectors
Authors:
Wu, WG Jiang, DS Cui, LQ Song, CY Zhuang, Y
Citation:
Wg. Wu et al., Structural and photoelectric studies on double barrier quantum well infrared detectors, SOL ST ELEC, 43(4), 1999, pp. 723-727
Uniformity enhancement of the self-organized InAs quantum dots
Authors:
Zhu, HJ Wang, ZM Wang, H Cui, LQ Feng, SL
Citation:
Hj. Zhu et al., Uniformity enhancement of the self-organized InAs quantum dots, J CRYST GR, 197(1-2), 1999, pp. 372-375
Risultati:
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