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Authors: KLEIDER JP DAYOUB F

Citation: Jp. Kleider et F. Dayoub, DEFECT CREATION AND REMOVAL IN HYDROGENATED AMORPHOUS-SILICON PREDICTED BY THE DEFECT-POOL MODEL AND REVEALED BY THE QUASI-STATIC CAPACITANCE OF METAL-INSULATOR-SEMICONDUCTOR STRUCTURES, Physical review. B, Condensed matter, 55(16), 1997, pp. 10181-10184

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Authors: DAYOUB F KLEIDER JP LONGEAUD C MENCARAGLIA D REYNAUD J

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Authors: FABRE A DAYOUB F DURUISSEAU L KAMOUN M

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