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Results: 1-12 |
Results: 12
THE (ROOT-3-X-ROOT-3)R30-DEGREES-RECONSTRUCTED 6H-SIC(0001) - A SEMICONDUCTING SURFACE
Authors: FORBEAUX I THEMLIN JM LANGLAIS V YU LM BELKHIR H DEBEVER JM
Citation: I. Forbeaux et al., THE (ROOT-3-X-ROOT-3)R30-DEGREES-RECONSTRUCTED 6H-SIC(0001) - A SEMICONDUCTING SURFACE, Surface review and letters, 5(1), 1998, pp. 193-197
UNOCCUPIED SURFACE-STATE ON THE (ROOT-3X-ROOT-3) R30-DEGREES RECONSTRUCTION OF 6H-SIC(0001)
Authors: THEMLIN JM FORBEAUX I LANGLAIS V BELKHIR H DEBEVER JM
Citation: Jm. Themlin et al., UNOCCUPIED SURFACE-STATE ON THE (ROOT-3X-ROOT-3) R30-DEGREES RECONSTRUCTION OF 6H-SIC(0001), Europhysics letters, 39(1), 1997, pp. 61-66
RBF GE(111) INTERFACE FORMATION STUDIED BY LEED, XPS, AND UPS/
Authors: WIAME F YU LM SPORKEN R THIRY PA CAUDANO R LANGLAIS V BELKHIR H DEBEVER JM
Citation: F. Wiame et al., RBF GE(111) INTERFACE FORMATION STUDIED BY LEED, XPS, AND UPS/, Physical review. B, Condensed matter, 54(7), 1996, pp. 4480-4483
INTRINSIC VALENCE AND CONDUCTION BANDS OF SI(111)-1X1
Authors: HE Y BOUZIDI S HAN BY YU LM THIRY PA CAUDANO R DEBEVER JM
Citation: Y. He et al., INTRINSIC VALENCE AND CONDUCTION BANDS OF SI(111)-1X1, Physical review. B, Condensed matter, 54(24), 1996, pp. 17654-17660
CAGE RELAXATION EFFECTS ON THE LOCAL-DENSITY OF STATES IN A C-60 DERIVATIVE
Authors: YU LM LANGLAIS V GHIJSEN J GENSTERBLUM G GAN LB JOHNSON RL CAUDANO R FORBEAUX I THEMLIN JM DEBEVER JM HUANG CH
Citation: Lm. Yu et al., CAGE RELAXATION EFFECTS ON THE LOCAL-DENSITY OF STATES IN A C-60 DERIVATIVE, Chemical physics letters, 257(1-2), 1996, pp. 163-168
INITIAL-STATE AND FINAL-STATE EFFECTS IN THE CONDUCTION BANDS OF 2H-MOS2(0001) STUDIED BY K(PARALLEL-TO)-RESOLVED INVERSE-PHOTOEMISSION SPECTROSCOPY
Authors: LANGLAIS V BELKHIR H THEMLIN JM DEBEVER JM YU LM THIRY PA
Citation: V. Langlais et al., INITIAL-STATE AND FINAL-STATE EFFECTS IN THE CONDUCTION BANDS OF 2H-MOS2(0001) STUDIED BY K(PARALLEL-TO)-RESOLVED INVERSE-PHOTOEMISSION SPECTROSCOPY, Physical review. B, Condensed matter, 52(16), 1995, pp. 12095-12101
INVERSE-PHOTOEMISSION STUDY OF NON-RECONSTRUCTED SI(111) SURFACES - ACOMPARISON BETWEEN H-SI(111)1X1 AND AS-SI(111)1X1
Authors: BOUZIDI S GUYAUX JL LANGLAIS V BELKHIR H DEBEVER JM THIRY PA
Citation: S. Bouzidi et al., INVERSE-PHOTOEMISSION STUDY OF NON-RECONSTRUCTED SI(111) SURFACES - ACOMPARISON BETWEEN H-SI(111)1X1 AND AS-SI(111)1X1, Surface science, 333, 1995, pp. 1244-1249
SEMICONDUCTORS UNDER ACTION OF STRONG EXC ITATION AND EXCITON CONDENSATION
Authors: DEBEVER JM SALVAN F
Citation: Jm. Debever et F. Salvan, SEMICONDUCTORS UNDER ACTION OF STRONG EXC ITATION AND EXCITON CONDENSATION, Annales de physique, 20(3), 1995, pp. 381-388
ELECTRONIC-STRUCTURE OF THE PROTOTYPICAL AS-SI(111)-1X1 SURFACE INVESTIGATED BY INVERSE-PHOTOEMISSION SPECTROSCOPY
Authors: BOUZIDI S ANGOT T COLETTI F DEBEVER JM GUYAUX JL THIRY PA
Citation: S. Bouzidi et al., ELECTRONIC-STRUCTURE OF THE PROTOTYPICAL AS-SI(111)-1X1 SURFACE INVESTIGATED BY INVERSE-PHOTOEMISSION SPECTROSCOPY, Physical review. B, Condensed matter, 49(23), 1994, pp. 16539-16543
INVERSE-PHOTOEMISSION SPECTROSCOPY OF GASE AND INSE
Authors: SPORKEN R HAFSI R COLETTI F DEBEVER JM THIRY PA CHEVY A
Citation: R. Sporken et al., INVERSE-PHOTOEMISSION SPECTROSCOPY OF GASE AND INSE, Physical review. B, Condensed matter, 49(16), 1994, pp. 11093-11099
THE USE OF HIGH-RESOLUTION ELECTRON-ENERGY-LOSS SPECTROSCOPY FOR REFINING THE INFRARED OPTICAL-CONSTANTS OF GAS, GASE, AND INSE
Authors: YU LM THIRY PA DEGIOVANNI A CONARD T LECLERC G CAUDANO R LAMBIN P DEBEVER JM
Citation: Lm. Yu et al., THE USE OF HIGH-RESOLUTION ELECTRON-ENERGY-LOSS SPECTROSCOPY FOR REFINING THE INFRARED OPTICAL-CONSTANTS OF GAS, GASE, AND INSE, Surface science, 312(1-2), 1994, pp. 174-180
INVERSE-PHOTOEMISSION SPECTROSCOPY OF ELECTRON-IRRADIATED EPITAXIAL CAF2 ON SI(111)
Authors: BOUZIDI S ANGOT T LANGLAIS V DEBEVER JM SPORKEN R LONGUEVILLE JL THIRY PA
Citation: S. Bouzidi et al., INVERSE-PHOTOEMISSION SPECTROSCOPY OF ELECTRON-IRRADIATED EPITAXIAL CAF2 ON SI(111), Surface science, 309, 1994, pp. 1038-1044
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