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Results: 3
IN-SITU MEASUREMENTS OF TEMPERATURE-DEPENDENT STRAIN RELAXATION OF GESI(111)/
Authors:
DEELMAN PW SCHOWALTER LJ THUNDAT T
Citation:
Pw. Deelman et al., IN-SITU MEASUREMENTS OF TEMPERATURE-DEPENDENT STRAIN RELAXATION OF GESI(111)/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 930-935
OPTICAL STUDIES OF GE ISLANDING ON SI(111)
Authors:
PERSANS PD DEELMAN PW STOKES KL SCHOWALTER LJ BYRNE A THUNDAT T
Citation:
Pd. Persans et al., OPTICAL STUDIES OF GE ISLANDING ON SI(111), Applied physics letters, 70(4), 1997, pp. 472-474
AFM AND RHEED STUDY OF GE ISLANDING ON SI(111) AND SI(100)
Authors:
DEELMAN PW THUNDAT T SCHOWALTER LJ
Citation:
Pw. Deelman et al., AFM AND RHEED STUDY OF GE ISLANDING ON SI(111) AND SI(100), Applied surface science, 104, 1996, pp. 510-515
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