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Results: 1-3 |
Results: 3
HIGH-PERFORMANCE SIGE EPITAXIAL BASE BIPOLAR-TRANSISTORS PRODUCED BY A REDUCED-PRESSURE CVD REACTOR
Authors: HONG M DEFRESART E STEELE J ZLOTNICKA A STEIN C TAM G RACANELLI M KNOCH L SEE YC EVANS K
Citation: M. Hong et al., HIGH-PERFORMANCE SIGE EPITAXIAL BASE BIPOLAR-TRANSISTORS PRODUCED BY A REDUCED-PRESSURE CVD REACTOR, IEEE electron device letters, 14(9), 1993, pp. 450-452
REACTIVE ION ETCHING OF SIGE ALLOYS USING FLUORINE-CONTAINING PLASMAS
Authors: ZHANG Y OEHRLEIN GS DEFRESART E CORBETT JW
Citation: Y. Zhang et al., REACTIVE ION ETCHING OF SIGE ALLOYS USING FLUORINE-CONTAINING PLASMAS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 11(5), 1993, pp. 2492-2495
DEPTH PROFILING OF THE GE CONCENTRATION IN SIGE ALLOYS USING INSITU ELLIPSOMETRY DURING REACTIVE-ION ETCHING
Authors: KROESEN GMW OEHRLEIN GS DEFRESART E HAVERLAG M
Citation: Gmw. Kroesen et al., DEPTH PROFILING OF THE GE CONCENTRATION IN SIGE ALLOYS USING INSITU ELLIPSOMETRY DURING REACTIVE-ION ETCHING, Journal of applied physics, 73(12), 1993, pp. 8017-8026
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