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Authors: HUIZING HGA VISSER CCG COWERN NEB STOLK PA DEKRUIF RCM

Citation: Hga. Huizing et al., ULTRAFAST INTERSTITIAL INJECTION DURING TRANSIENT ENHANCED DIFFUSION OF BORON IN SILICON, Applied physics letters, 69(9), 1996, pp. 1211-1213

Authors: OVERWIJK MHF POLITIEK J DEKRUIF RCM ZALM PC

Citation: Mhf. Overwijk et al., PROXIMITY GETTERING OF TRANSITION-METALS IN SILICON BY ION-IMPLANTATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 257-260

Authors: CAO GZ VANENCKEVORT WJP GILING LJ DEKRUIF RCM

Citation: Gz. Cao et al., ENHANCEMENT OF PHOSPHORUS INCORPORATION AND GROWTH-RATE OF EPITAXIAL DIAMOND FILMS BY THE ADDITION OF NITROGEN, Applied physics letters, 66(6), 1995, pp. 688-690

Authors: ZALM PC DEKRUIF RCM

Citation: Pc. Zalm et Rcm. Dekruif, PROBLEMS IN THE DECONVOLUTION OF SIMS DEPTH PROFILES USING DELTA-DOPED TEST STRUCTURES, Applied surface science, 70-1, 1993, pp. 73-78