Authors:
BAHL SR
DELALAMO JA
DICKMANN J
SCHILDBERG S
Citation: Sr. Bahl et al., IIIA-1 PHYSICS OF BREAKDOWN IN INALAS INGAAS MODFETS/, I.E.E.E. transactions on electron devices, 40(11), 1993, pp. 2110-2111
Authors:
EUGSTER CC
DELALAMO JA
MELLOCH MR
ROOKS MJ
Citation: Cc. Eugster et al., 1D TO 1D TUNNELING IN A DUAL ELECTRON WAVE-GUIDE DEVICE, I.E.E.E. transactions on electron devices, 40(11), 1993, pp. 2135-2136
Citation: Sr. Bahl et Ja. Delalamo, ELIMINATION OF MESA-SIDEWALL GATE LEAKAGE IN INA1AS INGAAS HETEROSTRUCTURES BY SELECTIVE SIDEWALL RECESSING/, IEEE electron device letters, 13(4), 1992, pp. 195-197
Authors:
MORAN PW
ELLIOTT SS
WYLIE N
HENDERSON RM
DELALAMO JA
Citation: Pw. Moran et al., A PROCESS-CONTROL METHODOLOGY APPLIED TO MANUFACTURING GAAS MMICS, IEEE transactions on semiconductor manufacturing, 4(4), 1991, pp. 304-311