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Results: 1-25 | 26-31 |
Results: 26-31/31
IIIA-1 PHYSICS OF BREAKDOWN IN INALAS INGAAS MODFETS/
Authors: BAHL SR DELALAMO JA DICKMANN J SCHILDBERG S
Citation: Sr. Bahl et al., IIIA-1 PHYSICS OF BREAKDOWN IN INALAS INGAAS MODFETS/, I.E.E.E. transactions on electron devices, 40(11), 1993, pp. 2110-2111
1D TO 1D TUNNELING IN A DUAL ELECTRON WAVE-GUIDE DEVICE
Authors: EUGSTER CC DELALAMO JA MELLOCH MR ROOKS MJ
Citation: Cc. Eugster et al., 1D TO 1D TUNNELING IN A DUAL ELECTRON WAVE-GUIDE DEVICE, I.E.E.E. transactions on electron devices, 40(11), 1993, pp. 2135-2136
THERMAL-STABILITY OF STRAINED INXGA1-XAS INYAL1-YAS/INP HETEROSTRUCTURES/
Authors: BENNETT BR DELALAMO JA
Citation: Br. Bennett et Ja. Delalamo, THERMAL-STABILITY OF STRAINED INXGA1-XAS INYAL1-YAS/INP HETEROSTRUCTURES/, Applied physics letters, 63(8), 1993, pp. 1122-1124
FAR-INFRARED PHOTON-INDUCED CURRENT IN A QUANTUM POINT-CONTACT
Authors: WYSS RA EUGSTER CC DELALAMO JA HU Q
Citation: Ra. Wyss et al., FAR-INFRARED PHOTON-INDUCED CURRENT IN A QUANTUM POINT-CONTACT, Applied physics letters, 63(11), 1993, pp. 1522-1524
ELIMINATION OF MESA-SIDEWALL GATE LEAKAGE IN INA1AS INGAAS HETEROSTRUCTURES BY SELECTIVE SIDEWALL RECESSING/
Authors: BAHL SR DELALAMO JA
Citation: Sr. Bahl et Ja. Delalamo, ELIMINATION OF MESA-SIDEWALL GATE LEAKAGE IN INA1AS INGAAS HETEROSTRUCTURES BY SELECTIVE SIDEWALL RECESSING/, IEEE electron device letters, 13(4), 1992, pp. 195-197
A PROCESS-CONTROL METHODOLOGY APPLIED TO MANUFACTURING GAAS MMICS
Authors: MORAN PW ELLIOTT SS WYLIE N HENDERSON RM DELALAMO JA
Citation: Pw. Moran et al., A PROCESS-CONTROL METHODOLOGY APPLIED TO MANUFACTURING GAAS MMICS, IEEE transactions on semiconductor manufacturing, 4(4), 1991, pp. 304-311
Risultati: 1-25 | 26-31 |