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Results: 1-8 |
Results: 8
COUPLED LONGITUDINAL OPTIC PHONON-PLASMON MODES IN P-TYPE GAN
Authors: DEMANGEOT F FRANDON J RENUCCI MA GRANDJEAN N BEAUMONT B MASSIES J GIBART P
Citation: F. Demangeot et al., COUPLED LONGITUDINAL OPTIC PHONON-PLASMON MODES IN P-TYPE GAN, Solid state communications, 106(8), 1998, pp. 491-494
MOLECULAR-BEAM EPITAXY OF GALLIUM NITRIDE ON (0001)SAPPHIRE SUBSTRATES USING AMMONIA
Authors: GRANDJEAN N MASSIES J VENNEGUES P LEROUX M DEMANGEOT F RENUCCI M FRANDON J
Citation: N. Grandjean et al., MOLECULAR-BEAM EPITAXY OF GALLIUM NITRIDE ON (0001)SAPPHIRE SUBSTRATES USING AMMONIA, Journal of applied physics, 83(3), 1998, pp. 1379-1383
THERMAL-STABILITY OF GAN INVESTIGATED BY RAMAN-SCATTERING
Authors: KUBALL M DEMANGEOT F FRANDON J RENUCCI MA MASSIES J GRANDJEAN N AULOMBARD RL BRIOT O
Citation: M. Kuball et al., THERMAL-STABILITY OF GAN INVESTIGATED BY RAMAN-SCATTERING, Applied physics letters, 73(7), 1998, pp. 960-962
COUPLING OF GAN-LIKE AND ALN-LIKE LONGITUDINAL OPTIC PHONONS IN GA1-XALXN SOLID-SOLUTIONS
Authors: DEMANGEOT F GROENEN J FRANDON J RENUCCI MA BRIOT O CLUR S AULOMBARD RL
Citation: F. Demangeot et al., COUPLING OF GAN-LIKE AND ALN-LIKE LONGITUDINAL OPTIC PHONONS IN GA1-XALXN SOLID-SOLUTIONS, Applied physics letters, 72(21), 1998, pp. 2674-2676
GAN LAYER GROWTH IN RELATION TO BUFFER DEPOSITION TEMPERATURE
Authors: DEMANGEOT F RENUCCI MA FRANDON J BRIOT O
Citation: F. Demangeot et al., GAN LAYER GROWTH IN RELATION TO BUFFER DEPOSITION TEMPERATURE, Materials science & engineering. B, Solid-state materials for advanced technology, 43(1-3), 1997, pp. 246-249
MOVPE GROWTH AND OPTICAL-PROPERTIES OF GAN DEPOSITED ON C-PLANE SAPPHIRE
Authors: BRIOT O GIL B TCHOUNKEU M AULOMBARD RL DEMANGEOT F FRANDON J RENUCCI M
Citation: O. Briot et al., MOVPE GROWTH AND OPTICAL-PROPERTIES OF GAN DEPOSITED ON C-PLANE SAPPHIRE, Journal of electronic materials, 26(3), 1997, pp. 294-300
INTERPLAY OF ELECTRONS AND PHONONS IN HEAVILY-DOPED GAN EPILAYERS
Authors: DEMANGEOT F FRANDON J RENUCCI MA MENY C BRIOT O AULOMBARD RL
Citation: F. Demangeot et al., INTERPLAY OF ELECTRONS AND PHONONS IN HEAVILY-DOPED GAN EPILAYERS, Journal of applied physics, 82(3), 1997, pp. 1305-1309
RAMAN DETERMINATION OF PHONON DEFORMATION POTENTIALS IN ALPHA-GAN
Authors: DEMANGEOT F FRANDON J RENUCCI MA BRIOT O GIL B AULOMBARD RL
Citation: F. Demangeot et al., RAMAN DETERMINATION OF PHONON DEFORMATION POTENTIALS IN ALPHA-GAN, Solid state communications, 100(4), 1996, pp. 207-210
Risultati: 1-8 |