Citation: F. Demichelis et al., COMPOSITIONAL AND STRUCTURAL-ANALYSIS OF HYDROGENATED AMORPHOUS SILICON-NITROGEN ALLOYS PREPARED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic, 74(2), 1996, pp. 155-168
Authors:
DEMARTINO C
DEMICHELIS F
FUSCO G
TAGLIAFERRO A
Citation: C. Demartino et al., MECHANICAL AND PHYSICAL-PROPERTIES OF AMORPHOUS CARBON-BASED ALLOYS, DIAMOND AND RELATED MATERIALS, 5(3-5), 1996, pp. 461-465
Citation: F. Demichelis et al., THERMAL-STABILITY OF A-SI1-XCX-H FILMS GROWN BY PECVD WITH DIFFERENT GAS SOURCES, Physica. B, Condensed matter, 225(1-2), 1996, pp. 103-110
Authors:
DEMICHELIS F
CROVINI G
GIORGIS F
PIRRI CF
TRESSO E
RIGATO V
COSCIA U
AMBROSONE G
CATALANOTTI S
RAVA P
Citation: F. Demichelis et al., EFFECTS OF POWER-DENSITY AND MOLECULE DWELL TIME ON COMPOSITIONAL ANDOPTOELECTRONIC PROPERTIES OF A-SIC - H ALLOYS, Solid state communications, 98(7), 1996, pp. 617-622
Citation: Yc. Liu et al., THE EFFECT OF NITROGEN ON THE MICROSTRUCTURE AND THE LUMINESCENCE PROPERTIES OF A-C-H THIN-FILMS, Solid state communications, 100(8), 1996, pp. 597-602
Authors:
FATHALLAH M
GHARBI R
CROVINI G
DEMICHELIS F
GIORGIS F
PIRRI CF
TRESSO E
RAVA P
Citation: M. Fathallah et al., LIGHT-SOAKING IN A-SIC-H FILMS GROWN BY PECVD IN UNDILUTED AND HYDROGEN DILUTED SIH4-MIXTURES(CH4 GAS), Journal of non-crystalline solids, 200, 1996, pp. 490-494
Authors:
GIORGIS F
RAVA P
GALLONI R
RIZZOLI R
SUMMONTE C
CROVINI G
DEMICHELIS F
PIRRI CF
TRESSO E
RIGATO V
Citation: F. Giorgis et al., COMPOSITIONAL, OPTOELECTRONIC AND STRUCTURAL-PROPERTIES OF AMORPHOUS SILICON-NITROGEN ALLOYS DEPOSITED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, Journal of non-crystalline solids, 200, 1996, pp. 596-600
Authors:
DEMICHELIS F
CROVINI G
GIORGIS F
PIRRI CF
TRESSO E
Citation: F. Demichelis et al., HYDROGENATED AMORPHOUS SILICON-NITROGEN ALLOYS, A-SINX-H-Y - A WIDE-BAND GAP MATERIAL FOR OPTOELECTRONIC DEVICES, Journal of applied physics, 79(3), 1996, pp. 1730-1735
Citation: F. Demichelis et al., BONDING STRUCTURE AND DEFECTS IN WIDE-BAND GAP A-SI1-XCX-H FILMS DEPOSITED IN H-2 DILUTED SIH4-MIXTURES(CH4 GAS), Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties, 71(5), 1995, pp. 1015-1033
Authors:
DEMICHELIS F
CROVINI G
PIRRI CF
TRESSO E
GALLONI R
RIZZOLI R
SUMMONTE C
RAVA P
Citation: F. Demichelis et al., OPTIMIZATION OF RELEVANT DEPOSITION PARAMETERS FOR HIGH-QUALITY A-SIC-H FILMS, Solar energy materials and solar cells, 37(3-4), 1995, pp. 315-321
Authors:
DEMARTINO C
DEMICHELIS F
TAGLIAFERRO A
PATRINI M
RIZZI A
FONTAINE M
LAYET JM
Citation: C. Demartino et al., COMPARISON OF BULK AND SURFACE-STRUCTURE IN HYDROGENATED AMORPHOUS-CARBON FILMS, DIAMOND AND RELATED MATERIALS, 4(7), 1995, pp. 996-999
Authors:
DEMICHELIS F
GIORGIS F
PIRRI CF
TRESSO E
DELLAMEA G
RIGATO V
ZANDOLIN S
Citation: F. Demichelis et al., STRUCTURAL AND OPTOELECTRONIC PROPERTIES OF CARBON-RICH HYDROGENATED AMORPHOUS SILICON-CARBON FILMS, DIAMOND AND RELATED MATERIALS, 4(4), 1995, pp. 357-360
Authors:
DEMICHELIS F
RONG XF
SCHREITER S
TAGLIAFERRO A
DEMARTINO C
Citation: F. Demichelis et al., DEPOSITION AND CHARACTERIZATION OF AMORPHOUS-CARBON NITRIDE THIN-FILMS, DIAMOND AND RELATED MATERIALS, 4(4), 1995, pp. 361-365
Authors:
DEMICHELIS F
CROVINI G
GIORGIS F
PIRRI CF
TRESSO E
Citation: F. Demichelis et al., COMPARISON BETWEEN METHANE AND ACETYLENE AS CARBON-SOURCES FOR C-RICHA-SIC-H FILMS, DIAMOND AND RELATED MATERIALS, 4(4), 1995, pp. 473-477
Citation: C. Demartino et al., DETERMINATION OF THE SP(3) SP(2) RATIO IN A-C-H FILMS BY INFRARED SPECTROMETRY ANALYSIS/, DIAMOND AND RELATED MATERIALS, 4(10), 1995, pp. 1210-1215
Authors:
DEMICHELIS F
GIORGIS F
PIRRI CF
TRESSO E
AMATO G
COSCIA U
Citation: F. Demichelis et al., DENSITY OF GAP STATES IN A-SIC-H FILMS BY MEANS OF PHOTOCONDUCTIVE AND PHOTOTHERMAL SPECTROSCOPIES, Physica. B, Condensed matter, 205(2), 1995, pp. 169-174
Citation: F. Demichelis et al., COMPOSITIONAL AND STRUCTURAL-PROPERTIES OF HYDROGENATED AMORPHOUS SILICON-CARBON FILMS PREPARED BY ULTRA-HIGH-VACUUM PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION WITH DIFFERENT CARBON-SOURCES, Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties, 72(4), 1995, pp. 913-929
Authors:
DEMICHELIS F
CROVINI G
PIRRI CF
TRESSO E
GALLONI R
SUMMONTE C
RIZZOLI R
ZIGNANI F
RAVA P
Citation: F. Demichelis et al., BORON AND PHOSPHORUS DOPING OF A-SIC-H THIN-FILMS BY MEANS OF ION-IMPLANTATION, Thin solid films, 265(1-2), 1995, pp. 113-118
Citation: F. Demichelis et al., HYDROGEN DILUTION OF SILANE METHANE GAS-MIXTURES ON GROWTH AND STRUCTURE OF A-SI1-XCX-H ALLOYS, Solid state communications, 96(1), 1995, pp. 17-21
Authors:
DEMICHELIS F
CROVINI G
PIRRI CF
TRESSO E
GALLONI R
RIZZOLI R
SUMMONTE C
ZIGNANI F
RAVA P
MADAN A
Citation: F. Demichelis et al., THE INFLUENCE OF HYDROGEN DILUTION ON THE OPTOELECTRONIC AND STRUCTURAL-PROPERTIES OF HYDROGENATED AMORPHOUS-SILICON CARBIDE FILMS, Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties, 69(2), 1994, pp. 377-386