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Authors: DEMARTINO C DEMICHELIS F TAGLIAFERRO A
Citation: C. Demartino et al., CHARACTERISTICS OF A-C-H-SI FILMS DEPOSITED BY RF-SPUTTERING UNDER VARIOUS DEPOSITION CONDITIONS, DIAMOND AND RELATED MATERIALS, 3(4-6), 1994, pp. 547-550

Authors: MOROSANU CO STOICA T DEMARTINO C DEMICHELIS F TAGLIAFERRO A
Citation: Co. Morosanu et al., HIGH GAP SPUTTERED DLC LAYERS, DIAMOND AND RELATED MATERIALS, 3(4-6), 1994, pp. 814-816

Authors: DEMICHELIS F DEMARTINO C TAGLIAFERRO A FANCIULLI M
Citation: F. Demichelis et al., TEMPERATURE-DEPENDENCE ANALYSIS OF THE ELECTRON-PARAMAGNETIC-RESONANCE SIGNAL AND ELECTRICAL-CONDUCTIVITY IN AC AND A-C-H, DIAMOND AND RELATED MATERIALS, 3(4-6), 1994, pp. 844-848

Authors: DEMICHELIS F CROVINI G PIRRI CF TRESSO E FANCIULLI M PIESARKIEWICZ T STAPINSKI T
Citation: F. Demichelis et al., STRUCTURAL AND OPTOELECTRONIC PROPERTIES OF DOPED MICROCRYSTALLINE SILICON-CARBIDE FILMS, Semiconductor science and technology, 9(8), 1994, pp. 1543-1548

Authors: DEMICHELIS F PIRRI CF TRESSO E
Citation: F. Demichelis et al., ELECTRICAL-TRANSPORT PROPERTIES OF DIPHASIC AMORPHOUS-MICROCRYSTALLINE SILICON-CARBON ALLOYS, International journal of modern physics b, 8(15), 1994, pp. 2059-2074

Authors: GHARBI R CHINE Z FATHALLAH M DEMICHELIS F PIRRI CF TRESSO E CROVINI G
Citation: R. Gharbi et al., EFFECTS OF PRESSURE AND HYDROGEN DILUTION ON GAP-STATE DEFECTS IN A-SIC-H, Annales de chimie, 19(7-8), 1994, pp. 441-446

Authors: DEMICHELIS F CROVINI G PIRRI CF TRESSO E AMATO G COSCIA U AMBROSONE G RAVA P
Citation: F. Demichelis et al., OPTIMIZATION OF A-SI1-XCXH FILMS PREPARED BY ULTRAHIGH-VACUUM PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION FOR ELECTROLUMINESCENT DEVICES, Thin solid films, 241(1-2), 1994, pp. 274-277

Authors: DEMICHELIS F CROVINI G PIRRI CF TRESSO E
Citation: F. Demichelis et al., INFRARED VIBRATIONAL-SPECTRA OF HYDROGENATED AMORPHOUS AND MICROCRYSTALLINE SILICON-CARBON ALLOYS - A COMPARISON OF THEIR STRUCTURE, Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties, 68(3), 1993, pp. 329-340

Authors: DEMICHELIS F PIRRI CF TRESSO E HERREMANS H GREVENDONK W ADRIAENSSENS GJ AMATO G COSCIA U
Citation: F. Demichelis et al., INVESTIGATION ON ELECTRONIC DENSITY-OF-STATES IN A-SIXC1-X-H FILMS, Applied surface science, 70-1, 1993, pp. 664-668

Authors: DEMICHELIS F CROVINI G GIORGIS F PIRRI CF TRESSO E AMATO G HERREMANS H GREVENDONK W RAVA P
Citation: F. Demichelis et al., ELECTRONIC DENSITY-OF-STATES IN A-SIC-H FILMS, Journal of non-crystalline solids, 166, 1993, pp. 1015-1018

Authors: LEO G GALUZZI G GUATTARI G VINCENZONI R DEMICHELIS F CROVINI G PIRRI CF TRESSO E
Citation: G. Leo et al., RELATIONS AMONG STRUCTURAL AND OPTOELECTRONIC PROPERTIES IN A-SIC-H FILMS WITH HIGH-C CONTENT AND HIGH PHOTOCONDUCTIVITY, Journal of non-crystalline solids, 166, 1993, pp. 1035-1038

Authors: DASGUPTA D DEMARTINO C DEMICHELIS F TAGLIAFERRO A
Citation: D. Dasgupta et al., THE ROLE OF PI AND PI-ASTERISK GAUSSIAN-LIKE DENSITY-OF-STATES BANDS IN THE INTERPRETATION OF THE PHYSICAL-PROPERTIES OF AC AND A-C-H FILMS, Journal of non-crystalline solids, 166, 1993, pp. 1147-1150

Authors: DEMICHELIS F PIRRI CF TRESSO E DELLAMEA G RIGATO V RAVA P
Citation: F. Demichelis et al., PHYSICAL-PROPERTIES OF UNDOPED AND DOPED HYDROGENATED AMORPHOUS-SILICON CARBIDE, Semiconductor science and technology, 6(12), 1991, pp. 1141-1146
Risultati: 1-25 | 26-38 |