Authors:
GRANDJEAN N
MASSIES J
LEROUX M
DEMIERRY P
Citation: N. Grandjean et al., BAND-EDGE VERSUS DEEP LUMINESCENCE OF INXGA1-XN LAYERS GROWN BY MOLECULAR-BEAM EPITAXY, Applied physics letters, 72(24), 1998, pp. 3190-3192
Authors:
DEMIERRY P
AMBACHER O
KRATZER H
STUTZMANN M
Citation: P. Demierry et al., YELLOW LUMINESCENCE AND HYDROCARBON CONTAMINATION IN MOVPE-GROWN GAN, Physica status solidi. a, Applied research, 158(2), 1996, pp. 587-597
Authors:
BALLUTAUD D
DEBIEMMECHOUVY C
ETCHEBERRY A
DEMIERRY P
SVOB L
Citation: D. Ballutaud et al., REACTIVITY OF III-V AND II-VI SEMICONDUCTORS TOWARD HYDROGEN - SURFACE MODIFICATION AND EVOLUTION IN AIR, Applied surface science, 84(2), 1995, pp. 187-192
Citation: P. Demierry et al., PLASMA DAMAGE AND ACCEPTOR PASSIVATION IN D2-PLASMA-TREATED INPZN - APHOTOLUMINESCENCE AND ELLIPSOMETRY STUDY, Physical review. B, Condensed matter, 49(8), 1994, pp. 5283-5290
Authors:
DEMIERRY P
ETCHEBERRY A
RIZK R
ETCHEGOIN P
AUCOUTURIER M
Citation: P. Demierry et al., DEFECTS INDUCED IN P-TYPE SILICON BY PHOTOCATHODIC CHARGING OF HYDROGEN, Journal of the Electrochemical Society, 141(6), 1994, pp. 1539-1546