Authors: CHANG KM DENG IC SHIH CW LAIN KD FU CM

Citation: Km. Chang et al., THE CHARACTERISTICS OF CHEMICAL-VAPOR-DEPOSITED AMORPHOUS-LIKE TUNGSTEN FILM AS A GATE ELECTRODE, JPN J A P 1, 37(9A), 1998, pp. 4933-4937

Authors: CHANG KM YEH TH DENG IC SHIH CW

Citation: Km. Chang et al., AMORPHOUS-LIKE CHEMICAL-VAPOR-DEPOSITED TUNGSTEN DIFFUSION BARRIER FOR COPPER METALLIZATION AND EFFECTS OF NITROGEN ADDITION, Journal of applied physics, 82(3), 1997, pp. 1469-1475

Authors: CHANG KM YEH TH DENG IC

Citation: Km. Chang et al., NITRIDATION OF FINE-GRAIN CHEMICAL-VAPOR-DEPOSITED TUNGSTEN FILM AS DIFFUSION BARRIER FOR ALUMINUM METALLIZATION, Journal of applied physics, 81(8), 1997, pp. 3670-3676

Authors: CHANG KM YEH TH DENG IC LIN HC

Citation: Km. Chang et al., HIGHLY SELECTIVE ETCHING FOR POLYSILICON AND ETCH-INDUCED DAMAGE TO GATE OXIDE WITH HALOGEN-BEARING ELECTRON-CYCLOTRON-RESONANCE PLASMA, Journal of applied physics, 80(5), 1996, pp. 3048-3055