AAAAAA
Results: 1-25/66
Authors:
DENG Q
DEPPE DG
Citation: Q. Deng et Dg. Deppe, SPONTANEOUS LIFETIME IN A DIELECTRICALLY-APERTURED FABRY-PEROT MICROCAVITY, OPTICS EXPRESS, 2(4), 1998, pp. 157-162
Authors:
OH TH
SHCHEKIN OB
DEPPE DG
Citation: Th. Oh et al., SINGLE-MODE OPERATION IN AN ANTIGUIDED VERTICAL-CAVITY SURFACE-EMITTING LASER USING A LOW-TEMPERATURE-GROWN ALGAAS DIELECTRIC APERTURE, IEEE photonics technology letters, 10(8), 1998, pp. 1064-1066
Authors:
HUFFAKER DL
DENG H
DEPPE DG
Citation: Dl. Huffaker et al., 1.15-MU-M WAVELENGTH OXIDE-CONFINED QUANTUM-DOT VERTICAL-CAVITY SURFACE-EMITTING LASER, IEEE photonics technology letters, 10(2), 1998, pp. 185-187
Authors:
DEPPE DG
KUDARI A
HUFFAKER DL
DENG H
DENG Q
CAMPBELL JC
Citation: Dg. Deppe et al., MODE-COUPLING IN A NARROW SPECTRAL BANDWIDTH QUANTUM-DOT MICROCAVITY PHOTODETECTOR, IEEE photonics technology letters, 10(2), 1998, pp. 252-254
Authors:
ZOU Z
SHCHEKIN OB
PARK G
HUFFAKER DL
DEPPE DG
Citation: Z. Zou et al., THRESHOLD TEMPERATURE-DEPENDENCE OF LATERAL-CAVITY QUANTUM-DOT LASERS, IEEE photonics technology letters, 10(12), 1998, pp. 1673-1675
Authors:
OH TH
MCDANIEL MR
HUFFAKER DL
DEPPE DG
Citation: Th. Oh et al., CAVITY-INDUCED ANTIGUIDING IN A SELECTIVELY OXIDIZED VERTICAL-CAVITY SURFACE-EMITTING LASER, IEEE photonics technology letters, 10(1), 1998, pp. 12-14
Authors:
HUFFAKER DL
DEPPE DG
Citation: Dl. Huffaker et Dg. Deppe, ELECTROLUMINESCENCE EFFICIENCY OF 1.3 MU-M WAVELENGTH INGAAS GAAS QUANTUM DOTS/, Applied physics letters, 73(4), 1998, pp. 520-522
Authors:
HUFFAKER DL
DEPPE DG
Citation: Dl. Huffaker et Dg. Deppe, ELECTRON AND HOLE TUNNELING IN A MODERATE DENSITY QUANTUM-DOT ENSEMBLE WITH SHALLOW CONFINEMENT POTENTIALS, Applied physics letters, 73(3), 1998, pp. 366-368
Authors:
HUFFAKER DL
PARK G
ZOU Z
SHCHEKIN OB
DEPPE DG
Citation: Dl. Huffaker et al., 1.3 MU-M ROOM-TEMPERATURE GAAS-BASED QUANTUM-DOT LASER, Applied physics letters, 73(18), 1998, pp. 2564-2566
Authors:
OH TH
MCDANIEL MR
HUFFAKER DL
DEPPE DG
Citation: Th. Oh et al., GUIDING AND ANTIGUIDING EFFECTS IN EPITAXIALLY REGROWN VERTICAL-CAVITY SURFACE-EMITTING LASERS, Applied physics letters, 72(22), 1998, pp. 2782-2784
Authors:
HUFFAKER DL
GRAHAM LA
DEPPE DG
Citation: Dl. Huffaker et al., ULTRANARROW ELECTROLUMINESCENCE SPECTRUM FROM THE GROUND-STATE OF AN ENSEMBLE OF SELF-ORGANIZED QUANTUM DOTS, Applied physics letters, 72(2), 1998, pp. 214-216
Authors:
GRAHAM LA
HUFFAKER DL
DENG Q
DEPPE DG
Citation: La. Graham et al., CONTROLLED SPONTANEOUS LIFETIME IN MICROCAVITY CONFINED INGAALAS GAASQUANTUM DOTS/, Applied physics letters, 72(14), 1998, pp. 1670-1672
Authors:
DEPPE DG
HUFFAKER DL
OH TH
DENG HY
DENG Q
Citation: Dg. Deppe et al., LOW-THRESHOLD VERTICAL-CAVITY SURFACE-EMITTING LASERS BASED ON OXIDE-CONFINEMENT AND HIGH-CONTRAST DISTRIBUTED BRAGG REFLECTORS, IEEE journal of selected topics in quantum electronics, 3(3), 1997, pp. 893-904
Authors:
QIAN Y
ZHU ZH
LO YH
HUFFAKER DL
DEPPE DG
HOU HQ
HAMMONS BE
LIN W
TU YK
Citation: Y. Qian et al., LOW-THRESHOLD PROTON-IMPLANTED 1.3-MU-M VERTICAL-CAVITY TOP-SURFACE-EMITTING LASERS WITH DIELECTRIC AND WAFER-BONDED GAAS-ALAS BRAGG MIRRORS, IEEE photonics technology letters, 9(7), 1997, pp. 866-868
Authors:
OH TH
HUFFAKER DL
DEPPE DG
Citation: Th. Oh et al., COMPARISON OF VERTICAL-CAVITY SURFACE-EMITTING LASERS WITH HALF-WAVE CAVITY SPACERS CONFINED BY SINGLE-OXIDE OR DOUBLE-OXIDE APERTURES, IEEE photonics technology letters, 9(7), 1997, pp. 875-877
Authors:
DEPPE DG
OH TH
HUFFAKER DL
Citation: Dg. Deppe et al., EIGENMODE CONFINEMENT IN THE DIELECTRICALLY APERTURED FABRY-PEROT MICROCAVITY, IEEE photonics technology letters, 9(6), 1997, pp. 713-715
Authors:
HUFFAKER DL
OH TH
DEPPE DG
Citation: Dl. Huffaker et al., TUNNEL INJECTION ACTIVE-REGION IN AN OXIDE-CONFINED VERTICAL-CAVITY SURFACE-EMITTING LASER, IEEE photonics technology letters, 9(6), 1997, pp. 716-718
ULTRA-LOW THRESHOLD CURRENT VERTICAL-CAVITY SURFACE-EMITTING LASERS FOR PHOTONIC INTEGRATED-CIRCUITS
Authors:
DEPPE DG
HUFFAKER DL
DENG HY
DENG Q
OH TH
Citation: Dg. Deppe et al., ULTRA-LOW THRESHOLD CURRENT VERTICAL-CAVITY SURFACE-EMITTING LASERS FOR PHOTONIC INTEGRATED-CIRCUITS, IEICE transactions on electronics, E80C(5), 1997, pp. 664-674
Authors:
DENG Q
DENG H
DEPPE DG
Citation: Q. Deng et al., RADIATION-FIELDS FROM WHISPERING-GALLERY MODES OF OXIDE-CONFINED VERTICAL-CAVITY SURFACE-EMITTING LASERS, Optics letters, 22(7), 1997, pp. 463-465
Authors:
BAKLENOV O
HUFFAKER DL
ANSELM A
DEPPE DG
STREETMAN BG
Citation: O. Baklenov et al., INFLUENCE OF AL CONTENT ON FORMATION OF INALGAAS QUANTUM DOTS GROWN BY MOLECULAR-BEAM EPITAXY, Journal of applied physics, 82(12), 1997, pp. 6362-6364
Authors:
DENG Q
DEPPE DG
Citation: Q. Deng et Dg. Deppe, SELF-CONSISTENT CALCULATION OF THE LASING EIGENMODE OF THE DIELECTRICALLY APERTURED FABRY-PEROT MICROCAVITY WITH IDEALIZED OR DISTRIBUTED BRAGG REFLECTORS, IEEE journal of quantum electronics, 33(12), 1997, pp. 2319-2326
Authors:
DEPPE DG
HUFFAKER DL
Citation: Dg. Deppe et Dl. Huffaker, HIGH SPATIAL COHERENCE VERTICAL-CAVITY SURFACE-EMITTING LASER USING ALONG MONOLITHIC CAVITY, Electronics Letters, 33(3), 1997, pp. 211-213
Authors:
MCDANIEL MR
HUFFAKER DL
DEPPE DG
Citation: Mr. Mcdaniel et al., HYBRID DIELECTRIC METAL REFLECTOR FOR LOW-THRESHOLD VERTICAL-CAVITY SURFACE-EMITTING LASERS/, Electronics Letters, 33(20), 1997, pp. 1704-1705
Authors:
CAMPBELL JC
HUFFAKER DL
DENG H
DEPPE DG
Citation: Jc. Campbell et al., QUANTUM-DOT RESONANT-CAVITY PHOTODIODE WITH OPERATION NEAR 1.3-MU-M WAVELENGTH, Electronics Letters, 33(15), 1997, pp. 1337-1339
Authors:
HUFFAKER DL
GRAHAM LA
DEPPE DG
Citation: Dl. Huffaker et al., LOW-THRESHOLD CONTINUOUS-WAVE OPERATION OF AN OXIDE-CONFINED VERTICAL-CAVITY SURFACE-EMITTING LASER-BASED ON A QUANTUM-DOT ACTIVE-REGION AND HALF-WAVE CAVITY, Electronics Letters, 33(14), 1997, pp. 1225-1226