Authors:
DEVASCONCELOS EA
ZHANG WY
UCHIDA H
KATSUBE T
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Citation: Ea. Devasconcelos et Ef. Dasilva, POSTIRRADIATION DOPANT PASSIVATION IN MOS CAPACITORS EXPOSED TO HIGH-DOSES OF X-RAYS, Semiconductor science and technology (Print), 13(11), 1998, pp. 1313-1316
Citation: Ea. Devasconcelos et Ef. Dasilva, CORRELATION BETWEEN DOPANT REDUCTION AND INTERFACIAL DEFECTS IN LOW-ENERGY X-RAY-IRRADIATED MOS CAPACITORS, Semiconductor science and technology, 12(8), 1997, pp. 1032-1037