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Results: 3
DEPTH DISTRIBUTION OF SILICON-ION INDUCED DEFECTS IN CRYSTALLINE SILICON
Authors: CHAVAN ST DHOLE SD BHORASKAR VN KANJILAL D MEHTA GK
Citation: St. Chavan et al., DEPTH DISTRIBUTION OF SILICON-ION INDUCED DEFECTS IN CRYSTALLINE SILICON, Journal of applied physics, 82(10), 1997, pp. 4805-4809
MEASUREMENT OF BACKSCATTERING PARAMETERS WITH A PULSED ELECTRON-BEAM
Authors: DHOLE SD CHAUDHARI DT BHORASKAR VN
Citation: Sd. Dhole et al., MEASUREMENT OF BACKSCATTERING PARAMETERS WITH A PULSED ELECTRON-BEAM, Measurement science & technology, 4(9), 1993, pp. 1006-1009
DEFECT STUDIES IN OXYGEN-ION-IRRADIATED SILICON-BASED METAL-INSULATOR-SEMICONDUCTOR STRUCTURES
Authors: RAILKAR TA BHORASKAR SV DHOLE SD BHORASKAR VN
Citation: Ta. Railkar et al., DEFECT STUDIES IN OXYGEN-ION-IRRADIATED SILICON-BASED METAL-INSULATOR-SEMICONDUCTOR STRUCTURES, Journal of applied physics, 74(7), 1993, pp. 4343-4346
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