Authors: DIATEZUA DM WANG Z PARK D CHEN Z ROCKETT A MORKOC H

Citation: Dm. Diatezua et al., SI3N4 ON GAAS BY DIRECT ELECTRON-CYCLOTRON-RESONANCE PLASMA-ASSISTED NITRIDATION OF SI LAYER IN SI GAAS STRUCTURE/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(2), 1998, pp. 507-510

Authors: CHEN Z MOHAMMAD SN PARK DG DIATEZUA DM MORKOC H CHANG YC

Citation: Z. Chen et al., BAND-STRUCTURE AND CONFINED ENERGY-LEVELS OF THE SI3N4 SI/GAAS SYSTEM/, Journal of applied physics, 82(1), 1997, pp. 275-280

Authors: PARK DG CHEN Z DIATEZUA DM WANG Z ROCKETT A MORKOC H ALTEROVITZ SA

Citation: Dg. Park et al., THERMAL-STABILITY OF SI3N4 SI GAAS INTERFACES, Applied physics letters, 70(10), 1997, pp. 1263-1265

Authors: DIATEZUA DM THIRY PA DEREUX A CAUDANO R

Citation: Dm. Diatezua et al., SILICON OXYNITRIDE MULTILAYERS AS SPECTRALLY SELECTIVE MATERIAL FOR PASSIVE RADIATIVE COOLING APPLICATIONS, Solar energy materials and solar cells, 40(3), 1996, pp. 253-259

Authors: PARK DG DIATEZUA DM CHEN Z MOHAMMAD SN MORKOC H

Citation: Dg. Park et al., CHARACTERISTICS OF SI3N4 SI/N-GAAS METAL-INSULATOR-SEMICONDUCTOR INTERFACES GROWN ON GAAS(111)B SUBSTRATE/, Applied physics letters, 69(20), 1996, pp. 3025-3027

Authors: DIATEZUA DM THIRY PA CAUDANO R

Citation: Dm. Diatezua et al., CONTROL OF RADIO-FREQUENCY-PLASMA PROCESS TO IMPROVE THE REPRODUCIBILITY OF SILICON OXYNITRIDE THIN-FILM PREPARATION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(4), 1995, pp. 2099-2104