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Results:
1-22
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Results: 22
Authors:
SCHURCH B
DOLLFUS P
Citation: B. Schurch et P. Dollfus, THE DEJERINES - AN HISTORICAL REVIEW AND HOMAGE TO 2 PIONEERS IN THE FIELD OF NEUROLOGY AND THEIR CONTRIBUTION TO THE UNDERSTANDING OF SPINAL-CORD PATHOLOGY, Spinal cord, 36(2), 1998, pp. 78-86
Authors:
DONOVAN WH
BROWN DJ
DITUNNO JF
DOLLFUS P
FRANKEL HL
Citation: Wh. Donovan et al., NEUROLOGICAL ISSUES, Spinal cord, 35(5), 1997, pp. 275-281
Authors:
DOLLFUS P
Citation: P. Dollfus, PROFILE OF THE IMSOP ANNUAL MEDALIST FOR 1996 - DR ZACH,GUIDO,A, MD, Spinal cord, 35(3), 1997, pp. 187-188
Authors:
DOLLFUS P
Citation: P. Dollfus, STUDY OF NONSTATIONARY TRANSPORT IN SI SI0.7GE0.3 N-MODFET USING MONTE-CARLO SIMULATION/, Physica status solidi. b, Basic research, 204(1), 1997, pp. 541-544
Authors:
DOLLFUS P
GALDIN S
ARBEY ME
HESTO P
Citation: P. Dollfus et al., STUDY OF UNIFORM AND GRADED SIGE CHANNEL HETEROJUNCTION P-MOSFETS USING MONTE-CARLO SIMULATION, Thin solid films, 294(1-2), 1997, pp. 259-262
Authors:
BOURNEL A
DOLLFUS P
GALDIN S
MUSALEM FX
HESTO P
Citation: A. Bournel et al., MODELING OF GATE-INDUCED SPIN PRECESSION IN A STRIPED CHANNEL HIGH-ELECTRON-MOBILITY TRANSISTOR, Solid state communications, 104(2), 1997, pp. 85-89
Authors:
DOLLFUS P
Citation: P. Dollfus, SI SI1-XGEX HETEROSTRUCTURES - ELECTRON-TRANSPORT AND FIELD-EFFECT TRANSISTOR OPERATION USING MONTE-CARLO SIMULATION/, Journal of applied physics, 82(8), 1997, pp. 3911-3916
Authors:
DOLLFUS P
Citation: P. Dollfus, MESSAGE FROM THE PRESIDENT, Spinal cord, 34(4), 1996, pp. 187-187
Authors:
DOLLFUS P
MUSALEM FX
GALDIN S
HESTO P
Citation: P. Dollfus et al., OPERATION OF SIGE CHANNEL HETEROJUNCTION P-MOSFET, Applied surface science, 102, 1996, pp. 259-262
Authors:
GALDIN S
MUSALEM FX
DOLLFUS P
MOUIS M
HESTO P
Citation: S. Galdin et al., TRANSIENT ANALYSIS OF CML INVERTER USING MONTE-CARLO SIMULATIONS, Solid-state electronics, 39(2), 1996, pp. 269-275
Authors:
DOLLFUS P
Citation: P. Dollfus, MESSAGE FROM THE PRESIDENT OF THE INTERNATIONAL-MEDICAL-SOCIETY-OF-PARAPLEGIA, Paraplegia, 34(1), 1996, pp. 3-3
Authors:
DOLLFUS P
Citation: P. Dollfus, THE INTERNATIONALITY OF IMSOP, Paraplegia, 33(1), 1995, pp. 3-4
Authors:
GALDIN S
DOLLFUS P
MOUIS M
MEYER F
HESTO P
Citation: S. Galdin et al., INFLUENCE OF BASE DOPANT OUT-DIFFUSION INTO THE EMITTER IN SI SIGE HETEROJUNCTION BIPOLAR-TRANSISTOR USING MONTE-CARLO SIMULATIONS/, Journal of crystal growth, 157(1-4), 1995, pp. 231-235
Authors:
DENORME S
MATHIOT D
DOLLFUS P
MOUIS M
Citation: S. Denorme et al., 2-DIMENSIONAL MODELING OF THE ENHANCED DIFFUSION IN THIN BASE N-P-N BIPOLAR-TRANSISTORS AFTER LATERAL ION IMPLANTATIONS, I.E.E.E. transactions on electron devices, 42(3), 1995, pp. 523-527
Authors:
GALDIN S
DOLLFUS P
HESTO P
Citation: S. Galdin et al., STATIC AND DYNAMIC BEHAVIOR OF A SI SI0.8GE0.2/SI HETEROJUNCTION BIPOLAR-TRANSISTOR USING MONTE-CARLO SIMULATION/, Journal of applied physics, 75(6), 1994, pp. 2963-2969
Authors:
BRISSET C
DOLLFUS P
MUSSEAU O
LERAY JL
HESTO P
Citation: C. Brisset et al., THEORETICAL-STUDY OF SEUS IN 0.25-MU-M FULLY-DEPLETED CMOS SOI TECHNOLOGY, IEEE transactions on nuclear science, 41(6), 1994, pp. 2297-2303
Authors:
BRISSET C
DOLLFUS P
HESTO P
MUSSEAU O
Citation: C. Brisset et al., MONTE-CARLO SIMULATION OF THE DYNAMIC BEHAVIOR OF A CMOS - INVERTER STRUCK BY A HEAVY-ION, IEEE transactions on nuclear science, 41(3), 1994, pp. 619-624
Authors:
ABRAMO A
BAUDRY L
BRUNETTI R
CASTAGNE R
CHAREF M
DESSENNE F
DOLLFUS P
DUTTON R
ENGL WL
FAUQUEMBERGUE R
FIEGNA C
FISCHETTI MV
GALDIN S
GOLDSMAN N
HACKEL M
HAMAGUCHI C
HESS K
HENNACY K
HESTO P
HIGMAN JM
IIZUKA T
JUNGEMANN C
KAMAKURA Y
KOSINA H
KUNIKIYO T
LAUX SE
LIM HC
MAZIAR C
MIZUNO H
PEIFER HJ
RAMASWAMY S
SANO N
SCORBOHACI PG
SELBERHERR S
TAKENAKA M
TANG TW
TANIGUCHI K
THOBEL JL
THOMA R
TOMIZAWA K
TOMIPZAWA M
VOGELSANG T
WANG SL
WANG XL
YAO CS
YODER PD
YOSHII A
Citation: A. Abramo et al., A COMPARISON OF NUMERICAL-SOLUTIONS OF THE BOLTZMANN TRANSPORT-EQUATION FOR HIGH-ENERGY ELECTRON-TRANSPORT SILICON, I.E.E.E. transactions on electron devices, 41(9), 1994, pp. 1646-1654
Authors:
DOLLFUS P
GALDIN S
BRISSET C
HESTO P
Citation: P. Dollfus et al., HIGH-FREQUENCY ANALYSIS OF FAST DEVICES USING SMALL-SIGNAL MONTE-CARLO SIMULATIONS - APPLICATION TO A 0.1 MU-M-GATE MODFET, Journal de physique. III, 3(9), 1993, pp. 1713-1718
Authors:
DOLLFUS P
HESTO P
GALDIN S
BRISSET C
Citation: P. Dollfus et al., MONTE-CARLO STUDY OF 50 NM-LONG SINGLE AND DUAL-GATE MODFETS - SUPPRESSION OF SHORT-CHANNEL EFFECTS, Journal de physique. III, 3(9), 1993, pp. 1719-1728
Authors:
HESTO P
BRISSET C
MUSSEAU O
DOLLFUS P
Citation: P. Hesto et al., MONTE-CARLO MODELING OF THE EFFECT OF AN IONIZING PARTICLE ON THE BEHAVIOR OF A MISFET SOI/, Annales de chimie, 18(2), 1993, pp. 101-112
Authors:
GALDIN S
HESTO P
DOLLFUS P
PONE JF
Citation: S. Galdin et al., MONTE-CARLO STUDY OF THE NONSTATIONARY TRANSPORT IN SI-SIGE HJBTS, Semiconductor science and technology, 7(3B), 1992, pp. 540-542
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