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Results: 1-11 |
Results: 11
ELECTRICAL-PROPERTIES OF LATERAL P-N-JUNCTIONS FORMED ON PATTERNED (110)GAAS SUBSTRATES
Authors: GARDNER NR WOODS NJ DOMINGUEZ PS TOK ES NORMAN CE HARRIS JJ
Citation: Nr. Gardner et al., ELECTRICAL-PROPERTIES OF LATERAL P-N-JUNCTIONS FORMED ON PATTERNED (110)GAAS SUBSTRATES, Semiconductor science and technology, 12(6), 1997, pp. 737-741
RELATIONSHIP BETWEEN SILICON INCORPORATION AND ELECTRICAL CHARACTERISTICS FOR LATERAL P-N-JUNCTIONS GROWN ON PATTERNED (110)GAAS AND (100)GAAS SUBSTRATES
Authors: GARDNER NR DOMINGUEZ PS HARRIS JJ
Citation: Nr. Gardner et al., RELATIONSHIP BETWEEN SILICON INCORPORATION AND ELECTRICAL CHARACTERISTICS FOR LATERAL P-N-JUNCTIONS GROWN ON PATTERNED (110)GAAS AND (100)GAAS SUBSTRATES, Semiconductor science and technology, 12(12), 1997, pp. 1583-1591
CHARACTERISTICS OF LATERAL PN JUNCTIONS GROWN ON (100)GAAS PATTERNED SUBSTRATE
Authors: GARDNER NR WOODS NJ DOMINGUEZ PS NORMAN CE HARRIS JJ
Citation: Nr. Gardner et al., CHARACTERISTICS OF LATERAL PN JUNCTIONS GROWN ON (100)GAAS PATTERNED SUBSTRATE, Journal of materials science. Materials in electronics, 7(5), 1996, pp. 315-319
SURFACE KINETICS AND MORPHOLOGY OF ARF LASER-ASSISTED ETCHING OF (113)A GAAS IN A CL-2 ENVIRONMENT
Authors: TEJEDOR P DOMINGUEZ PS
Citation: P. Tejedor et Ps. Dominguez, SURFACE KINETICS AND MORPHOLOGY OF ARF LASER-ASSISTED ETCHING OF (113)A GAAS IN A CL-2 ENVIRONMENT, Applied surface science, 89(3), 1995, pp. 271-279
PHONON PROPERTIES AND RAMAN RESPONSE OF (113) GAAS ALAS CORRUGATED SUPERLATTICES/
Authors: CASTRILLO P ARMELLES G GONZALEZ L DOMINGUEZ PS
Citation: P. Castrillo et al., PHONON PROPERTIES AND RAMAN RESPONSE OF (113) GAAS ALAS CORRUGATED SUPERLATTICES/, Physical review. B, Condensed matter, 51(3), 1995, pp. 1647-1652
A MATHEMATICAL-MODEL FOR EPITAXIAL-GROWTH ON NONPLANAR SUBSTRATES
Authors: DOMINGUEZ PS BRIONES F
Citation: Ps. Dominguez et F. Briones, A MATHEMATICAL-MODEL FOR EPITAXIAL-GROWTH ON NONPLANAR SUBSTRATES, Microelectronics, 26(8), 1995, pp. 751-757
FABRICATION OF PATTERNED (311)A GAAS SUBSTRATES BY ARF LASER-ASSISTEDCL-2 ETCHING
Authors: TEJEDOR P DOMINGUEZ PS
Citation: P. Tejedor et Ps. Dominguez, FABRICATION OF PATTERNED (311)A GAAS SUBSTRATES BY ARF LASER-ASSISTEDCL-2 ETCHING, Microelectronics, 26(8), 1995, pp. 853-859
OPTICAL-PROPERTIES OF (113)GAAS ALAS SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY AND ATOMIC LAYER MOLECULAR-BEAM EPITAXY/
Authors: BACQUET G HASSEN F LAURET N ARMELLES G DOMINGUEZ PS GONZALEZ L
Citation: G. Bacquet et al., OPTICAL-PROPERTIES OF (113)GAAS ALAS SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY AND ATOMIC LAYER MOLECULAR-BEAM EPITAXY/, Journal of applied physics, 77(1), 1995, pp. 339-342
OPTICAL ANISOTROPY OF (113)-ORIENTED GAAS ALAS SUPERLATTICES/
Authors: ARMELLES G CASTRILLO P DOMINGUEZ PS GONZALEZ L RUIZ A CONTRERASSOLORIO DA VELASCO VR GARCIAMOLINER F
Citation: G. Armelles et al., OPTICAL ANISOTROPY OF (113)-ORIENTED GAAS ALAS SUPERLATTICES/, Physical review. B, Condensed matter, 49(19), 1994, pp. 14020-14023
EXCITONS IN (311) ORIENTED SUPERLATTICES - OPTICAL ANISOTROPIES
Authors: ARMELLES G CASTRILLO P DOMINGUEZ PS GONZALEZ L RUIZ A CONTRERAS DA VELASCO VR GARCIAMOLINER F
Citation: G. Armelles et al., EXCITONS IN (311) ORIENTED SUPERLATTICES - OPTICAL ANISOTROPIES, Journal de physique. IV, 3(C5), 1993, pp. 283-286
STRUCTURAL AND OPTICAL CHARACTERIZATION OF ALTERNATELY STRAINED GAAS GAP/GAAS/INP SUPERLATTICES GROWN BY ATOMIC LAYER MOLECULAR-BEAM EPITAXY/
Authors: MAZUELAS A MELENDEZ J DOMINGUEZ PS GARRIGA M BALLESTEROS C GERTHSEN D BRIONES F
Citation: A. Mazuelas et al., STRUCTURAL AND OPTICAL CHARACTERIZATION OF ALTERNATELY STRAINED GAAS GAP/GAAS/INP SUPERLATTICES GROWN BY ATOMIC LAYER MOLECULAR-BEAM EPITAXY/, Journal of crystal growth, 127(1-4), 1993, pp. 623-626
Risultati: 1-11 |