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Results: 1-25 | 26-27
Results: 1-25/27
TRACE RARE-GASES OPTICAL-EMISSION SPECTROSCOPY FOR DETERMINATION OF ELECTRON TEMPERATURES AND SPECIES CONCENTRATIONS IN CHLORINE-CONTAININGPLASMAS
Authors: DONNELLY VM MALYSHEV MV KORNBLIT A CIAMPA NA COLONELL JI LEE JTC
Citation: Vm. Donnelly et al., TRACE RARE-GASES OPTICAL-EMISSION SPECTROSCOPY FOR DETERMINATION OF ELECTRON TEMPERATURES AND SPECIES CONCENTRATIONS IN CHLORINE-CONTAININGPLASMAS, JPN J A P 1, 37(4B), 1998, pp. 2388-2393
EFFECTS OF DEGREE OF DISSOCIATION ON ALUMINUM ETCHING IN HIGH-DENSITYCL-2 PLASMAS
Authors: SAMUKAWA S DONNELLY VM
Citation: S. Samukawa et Vm. Donnelly, EFFECTS OF DEGREE OF DISSOCIATION ON ALUMINUM ETCHING IN HIGH-DENSITYCL-2 PLASMAS, JPN J A P 2, 37(9AB), 1998, pp. 1036-1039
EFFECTS OF PLASMA CONDITIONS ON THE SHAPES OF FEATURES ETCHED IN CL-2AND HBR PLASMAS - I - BULK CRYSTALLINE SILICON ETCHING
Authors: VYVODA MA LEE H MALYSHEV MV KLEMENS FP CERULLO M DONNELLY VM GRAVES DB KORNBLIT A LEE JTC
Citation: Ma. Vyvoda et al., EFFECTS OF PLASMA CONDITIONS ON THE SHAPES OF FEATURES ETCHED IN CL-2AND HBR PLASMAS - I - BULK CRYSTALLINE SILICON ETCHING, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(6), 1998, pp. 3247-3258
LASER-INDUCED THERMAL-DESORPTION ANALYSIS OF THE SURFACE DURING GE ETCHING IN A CL-2 INDUCTIVELY-COUPLED PLASMA
Authors: CHOE JY HERMAN IP DONNELLY VM
Citation: Jy. Choe et al., LASER-INDUCED THERMAL-DESORPTION ANALYSIS OF THE SURFACE DURING GE ETCHING IN A CL-2 INDUCTIVELY-COUPLED PLASMA, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(6), 1998, pp. 3266-3273
HALOGEN UPTAKE BY THIN SIO2 LAYERS ON EXPOSURE TO HBR O-2 AND CL-2 PLASMAS, INVESTIGATED BY VACUUM TRANSFER X-RAY PHOTOELECTRON-SPECTROSCOPY/
Authors: DONNELLY VM LAYADI N
Citation: Vm. Donnelly et N. Layadi, HALOGEN UPTAKE BY THIN SIO2 LAYERS ON EXPOSURE TO HBR O-2 AND CL-2 PLASMAS, INVESTIGATED BY VACUUM TRANSFER X-RAY PHOTOELECTRON-SPECTROSCOPY/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(3), 1998, pp. 1571-1576
ULTRAHIGH FREQUENCY VERSUS INDUCTIVELY-COUPLED CHLORINE PLASMAS - COMPARISONS OF CL AND CL-2 CONCENTRATIONS AND ELECTRON TEMPERATURES MEASURED BY TRACE RARE-GASES OPTICAL-EMISSION SPECTROSCOPY
Authors: MALYSHEV MV DONNELLY VM SAMUKAWA S
Citation: Mv. Malyshev et al., ULTRAHIGH FREQUENCY VERSUS INDUCTIVELY-COUPLED CHLORINE PLASMAS - COMPARISONS OF CL AND CL-2 CONCENTRATIONS AND ELECTRON TEMPERATURES MEASURED BY TRACE RARE-GASES OPTICAL-EMISSION SPECTROSCOPY, Journal of applied physics, 84(3), 1998, pp. 1222-1230
PERCENT DISSOCIATION OF CL-2 IN INDUCTIVELY-COUPLED, CHLORINE-CONTAINING PLASMAS
Authors: MALYSHEV MV DONNELLY VM KORNBLIT A CIAMPA NA
Citation: Mv. Malyshev et al., PERCENT DISSOCIATION OF CL-2 IN INDUCTIVELY-COUPLED, CHLORINE-CONTAINING PLASMAS, Journal of applied physics, 84(1), 1998, pp. 137-146
ANALYSIS OF THE ETCHING OF SILICON IN AN INDUCTIVELY-COUPLED CHLORINEPLASMA USING LASER THERMAL-DESORPTION
Authors: CHOE JY HERMAN IP DONNELLY VM
Citation: Jy. Choe et al., ANALYSIS OF THE ETCHING OF SILICON IN AN INDUCTIVELY-COUPLED CHLORINEPLASMA USING LASER THERMAL-DESORPTION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(6), 1997, pp. 3024-3031
DETERMINATION OF ELECTRON TEMPERATURES IN PLASMAS BY MULTIPLE RARE-GAS OPTICAL-EMISSION, AND IMPLICATIONS FOR ADVANCED ACTINOMETRY
Authors: MALYSHEV MV DONNELLY VM
Citation: Mv. Malyshev et Vm. Donnelly, DETERMINATION OF ELECTRON TEMPERATURES IN PLASMAS BY MULTIPLE RARE-GAS OPTICAL-EMISSION, AND IMPLICATIONS FOR ADVANCED ACTINOMETRY, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 550-558
CL-2 PLASMA-ETCHING OF SI(100) - DAMAGED SURFACE-LAYER STUDIED BY IN-SITU SPECTROSCOPIC ELLIPSOMETRY
Authors: LAYADI N DONNELLY VM LEE JTC KLEMENS FP
Citation: N. Layadi et al., CL-2 PLASMA-ETCHING OF SI(100) - DAMAGED SURFACE-LAYER STUDIED BY IN-SITU SPECTROSCOPIC ELLIPSOMETRY, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 604-609
CL-2 PLASMA-ETCHING OF SI(100) - NATURE OF THE CHLORINATED SURFACE-LAYER STUDIED BY ANGLE-RESOLVED X-RAY PHOTOELECTRON-SPECTROSCOPY
Authors: LAYADI N DONNELLY VM LEE JTC
Citation: N. Layadi et al., CL-2 PLASMA-ETCHING OF SI(100) - NATURE OF THE CHLORINATED SURFACE-LAYER STUDIED BY ANGLE-RESOLVED X-RAY PHOTOELECTRON-SPECTROSCOPY, Journal of applied physics, 81(10), 1997, pp. 6738-6748
CLEANING OF CHF3 PLASMA-ETCHED SIO2 SIN/CU VIA STRUCTURES WITH DILUTEHYDROFLUORIC-ACID SOLUTIONS/
Authors: UENO K DONNELLY VM KIKKAWA T
Citation: K. Ueno et al., CLEANING OF CHF3 PLASMA-ETCHED SIO2 SIN/CU VIA STRUCTURES WITH DILUTEHYDROFLUORIC-ACID SOLUTIONS/, Journal of the Electrochemical Society, 144(7), 1997, pp. 2565-2572
MECHANISM FOR ANISOTROPIC ETCHING OF PHOTORESIST-MASKED, POLYCRYSTALLINE SILICON IN HBR PLASMAS
Authors: CHENG CC GUINN KV DONNELLY VM
Citation: Cc. Cheng et al., MECHANISM FOR ANISOTROPIC ETCHING OF PHOTORESIST-MASKED, POLYCRYSTALLINE SILICON IN HBR PLASMAS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(1), 1996, pp. 85-90
A SIMPLE OPTICAL-EMISSION METHOD FOR MEASURING PERCENT DISSOCIATIONS OF FEED GASES IN PLASMAS - APPLICATION TO CL-2 IN A HIGH-DENSITY HELICAL RESONATOR PLASMA
Authors: DONNELLY VM
Citation: Vm. Donnelly, A SIMPLE OPTICAL-EMISSION METHOD FOR MEASURING PERCENT DISSOCIATIONS OF FEED GASES IN PLASMAS - APPLICATION TO CL-2 IN A HIGH-DENSITY HELICAL RESONATOR PLASMA, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(3), 1996, pp. 1076-1087
SURFACE-CHEMISTRY DURING PLASMA-ETCHING OF SILICON
Authors: DONNELLY VM HERMAN IP CHENG CC GUINN KV
Citation: Vm. Donnelly et al., SURFACE-CHEMISTRY DURING PLASMA-ETCHING OF SILICON, Pure and applied chemistry, 68(5), 1996, pp. 1071-1074
MASS-SPECTROMETRIC MEASUREMENTS OF NEUTRAL REACTANT AND PRODUCT DENSITIES DURING SI ETCHING IN A HIGH-DENSITY HELICAL RESONATOR CL-2 PLASMA
Authors: DONNELLY VM
Citation: Vm. Donnelly, MASS-SPECTROMETRIC MEASUREMENTS OF NEUTRAL REACTANT AND PRODUCT DENSITIES DURING SI ETCHING IN A HIGH-DENSITY HELICAL RESONATOR CL-2 PLASMA, Journal of applied physics, 79(12), 1996, pp. 9353-9360
QUANTITATIVE CHEMICAL TOPOGRAPHY OF POLYCRYSTALLINE SI ANISOTROPICALLY ETCHED IN CL-2 O-2 HIGH-DENSITY PLASMAS/
Authors: GUINN KV CHENG CC DONNELLY VM
Citation: Kv. Guinn et al., QUANTITATIVE CHEMICAL TOPOGRAPHY OF POLYCRYSTALLINE SI ANISOTROPICALLY ETCHED IN CL-2 O-2 HIGH-DENSITY PLASMAS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(2), 1995, pp. 214-226
COMPETITIVE HALOGENATION OF SILICON SURFACES IN HBR CL-2 PLASMAS STUDIED RAY PHOTOELECTRON-SPECTROSCOPY AND IN-SITU, REAL-TIME, PULSED LASER-INDUCED THERMAL-DESORPTION/
Authors: CHENG CC GUINN KV HERMAN IP DONNELLY VM
Citation: Cc. Cheng et al., COMPETITIVE HALOGENATION OF SILICON SURFACES IN HBR CL-2 PLASMAS STUDIED RAY PHOTOELECTRON-SPECTROSCOPY AND IN-SITU, REAL-TIME, PULSED LASER-INDUCED THERMAL-DESORPTION/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(4), 1995, pp. 1970-1976
IN-SITU PULSED LASER-INDUCED THERMAL-DESORPTION STUDIES OF THE SILICON CHLORIDE SURFACE-LAYER DURING SILICON ETCHING IN HIGH-DENSITY PLASMAS OF CL2 AND CL2 O2 MIXTURES/
Authors: CHENG CC GUINN KV DONNELLY VM HERMAN IP
Citation: Cc. Cheng et al., IN-SITU PULSED LASER-INDUCED THERMAL-DESORPTION STUDIES OF THE SILICON CHLORIDE SURFACE-LAYER DURING SILICON ETCHING IN HIGH-DENSITY PLASMAS OF CL2 AND CL2 O2 MIXTURES/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(5), 1994, pp. 2630-2640
TEMPERATURE-DEPENDENCE OF THE NEAR-INFRARED REFRACTIVE-INDEX OF SILICON, GALLIUM-ARSENIDE, AND INDIUM-PHOSPHIDE
Authors: MCCAULLEY JA DONNELLY VM VERNON M TAHA I
Citation: Ja. Mccaulley et al., TEMPERATURE-DEPENDENCE OF THE NEAR-INFRARED REFRACTIVE-INDEX OF SILICON, GALLIUM-ARSENIDE, AND INDIUM-PHOSPHIDE, Physical review. B, Condensed matter, 49(11), 1994, pp. 7408-7417
LASER-INDUCED THERMAL-DESORPTION AS AN IN-SITU SURFACE PROBE DURING PLASMA PROCESSING
Authors: HERMAN IP DONNELLY VM GUINN KV CHENG CC
Citation: Ip. Herman et al., LASER-INDUCED THERMAL-DESORPTION AS AN IN-SITU SURFACE PROBE DURING PLASMA PROCESSING, Physical review letters, 72(17), 1994, pp. 2801-2804
CHEMICAL TOPOGRAPHY OF ANISOTROPIC ETCHING OF POLYCRYSTALLINE SI MASKED WITH PHOTORESIST
Authors: GUINN KV DONNELLY VM
Citation: Kv. Guinn et Vm. Donnelly, CHEMICAL TOPOGRAPHY OF ANISOTROPIC ETCHING OF POLYCRYSTALLINE SI MASKED WITH PHOTORESIST, Journal of applied physics, 75(4), 1994, pp. 2227-2234
AMMONIA PLASMA PASSIVATION OF GAAS IN DOWNSTREAM MICROWAVE AND RADIOFREQUENCY PARALLEL PLATE PLASMA REACTORS
Authors: AYDIL ES GIAPIS KP GOTTSCHO RA DONNELLY VM YOON E
Citation: Es. Aydil et al., AMMONIA PLASMA PASSIVATION OF GAAS IN DOWNSTREAM MICROWAVE AND RADIOFREQUENCY PARALLEL PLATE PLASMA REACTORS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(2), 1993, pp. 195-205
REAL-TIME DETERMINATION OF THE DIRECTION OF WAFER TEMPERATURE-CHANGE BY SPATIALLY-RESOLVED INFRARED-LASER INTERFEROMETRIC THERMOMETRY
Authors: DONNELLY VM
Citation: Vm. Donnelly, REAL-TIME DETERMINATION OF THE DIRECTION OF WAFER TEMPERATURE-CHANGE BY SPATIALLY-RESOLVED INFRARED-LASER INTERFEROMETRIC THERMOMETRY, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 11(5), 1993, pp. 2393-2397
DECOMPOSITION OF HEXAFLUOROACETYLACETONATE CU(I) VINYLTRIMETHYLSILANEON, AND DIFFUSION OF CU INTO SINGLE-CRYSTAL AND POLYCRYSTALLINE TITANIUM NITRIDE
Authors: GUINN KV DONNELLY VM GROSS ME BAIOCCHI FA PETROV I GREENE JE
Citation: Kv. Guinn et al., DECOMPOSITION OF HEXAFLUOROACETYLACETONATE CU(I) VINYLTRIMETHYLSILANEON, AND DIFFUSION OF CU INTO SINGLE-CRYSTAL AND POLYCRYSTALLINE TITANIUM NITRIDE, Surface science, 295(1-2), 1993, pp. 219-229
Risultati: 1-25 | 26-27