Authors: OSSICINI S DORIGONI L BISI O

Citation: S. Ossicini et al., LUMINESCENCE IN POROUS SILICON - THE ROLE OF CONFINEMENT AND PASSIVATION, Applied surface science, 102, 1996, pp. 395-398

Authors: DORIGONI L BISI O BERNARDINI F OSSICINI S

Citation: L. Dorigoni et al., ELECTRON-STATES AND LUMINESCENCE TRANSITION IN POROUS SILICON, Physical review. B, Condensed matter, 53(8), 1996, pp. 4557-4564

Authors: DORIGONI L PAVESI L BISI O CALLIARI L ANDERLE M OSSICINI S

Citation: L. Dorigoni et al., AUGER LINESHAPE ANALYSIS OF POROUS SILICON - EXPERIMENT AND THEORY, Thin solid films, 276(1-2), 1996, pp. 244-247

Authors: DORIGONI L BISI O BERNARDINI F OSSICINI S

Citation: L. Dorigoni et al., THE LUMINESCENCE TRANSITION IN POROUS SILICON - THE NATURE OF THE ELECTRONIC STATES, Thin solid films, 276(1-2), 1996, pp. 261-264