Authors: DOSSANTOS SG MARTINS LFO DAJELLO PCT PASA AA HASENACK CM

Citation: Sg. Dossantos et al., ELECTROLESS AND ELECTRO-PLATING OF CU ON SI, Microelectronic engineering, 33(1-4), 1997, pp. 59-64

Authors: DOSSANTOS SG PASA AA HASENACK CM

Citation: Sg. Dossantos et al., A MECHANISM FOR ELECTROLESS CU PLATING ONTO SI, Microelectronic engineering, 33(1-4), 1997, pp. 149-155

Authors: LOPES MCV DOSSANTOS SG HASENACK CM BARANAUSKAS V

Citation: Mcv. Lopes et al., SI-SIO2 ELECTRONIC INTERFACE ROUGHNESS AS A CONSEQUENCE OF SI-SIO2 TOPOGRAPHIC INTERFACE ROUGHNESS, Journal of the Electrochemical Society, 143(3), 1996, pp. 1021-1025

Authors: DOSSANTOS SG HASENACK CM LOPES MCV BARANAUSKAS V

Citation: Sg. Dossantos et al., RAPID THERMAL-OXIDATION OF SILICON WITH DIFFERENT THERMAL ANNEALING CYCLES IN NITROGEN - INFLUENCE ON SURFACE MICROROUGHNESS AND ELECTRICALCHARACTERISTICS, Semiconductor science and technology, 10(7), 1995, pp. 990-996