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Authors: DURAN HC CHEUNG R PATRICK W BACHTOLD W PFUND I HAHNER G

Citation: Hc. Duran et al., AN INVESTIGATION OF VARIOUS POST-RIE CLEANING PROCESSES FOR DRY-ETCHED INP-BASED HEMTS, Microelectronic engineering, 35(1-4), 1997, pp. 67-70

Authors: DURAN HC KLEPSER BUH BACHTOLD W

Citation: Hc. Duran et al., LOW-NOISE PROPERTIES OF DRY GATE RECESS ETCHED INP HEMTS, IEEE electron device letters, 17(10), 1996, pp. 482-484

Authors: DURAN HC SCHEFER M PATRICK W BACHTOLD W BECK M

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Citation: Hc. Duran et al., ATOMIC-FORCE MICROSCOPY INVESTIGATIONS OF DRY-ETCHED GATE RECESSES FOR INGAAS INALAS-BASED HIGH-ELECTRON-MOBILITY TRANSISTORS USING METHANE-HYDROGEN REACTIVE ION ETCHING/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2386-2389