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Results: 1-9 |
Results: 9
Selective copper metallization by electrochemical contact displacement with amorphous silicon film
Authors: Lee, YP Tsai, MS Hu, TC Dai, BT Feng, MS
Citation: Yp. Lee et al., Selective copper metallization by electrochemical contact displacement with amorphous silicon film, EL SOLID ST, 4(7), 2001, pp. C47-C49
Investigations of effects of bias polarization and chemical parameters on morphology and filling capability of 130 nm damascene electroplated copper
Authors: Chang, SC Shieh, JM Lin, KC Dai, BT Wang, TC Chen, CF Feng, MS Li, YH Lu, CP
Citation: Sc. Chang et al., Investigations of effects of bias polarization and chemical parameters on morphology and filling capability of 130 nm damascene electroplated copper, J VAC SCI B, 19(3), 2001, pp. 767-773
Characteristics of fluorinated amorphous carbon films and implementation of 0.15 mu m Cu/a-C : F damascene interconnection
Authors: Shieh, JM Suen, SC Tsai, KC Dai, BT Wu, YC Wu, YH
Citation: Jm. Shieh et al., Characteristics of fluorinated amorphous carbon films and implementation of 0.15 mu m Cu/a-C : F damascene interconnection, J VAC SCI B, 19(3), 2001, pp. 780-787
Plasma treatment and dry etch characteristics of organic low-k dielectrics
Authors: Wei, TC Liu, CH Shieh, JM Suen, SC Dai, BT
Citation: Tc. Wei et al., Plasma treatment and dry etch characteristics of organic low-k dielectrics, JPN J A P 1, 39(12B), 2000, pp. 7015-7018
Characterization of additive systems for damascene Cu electroplating by the superfilling profile monitor
Authors: Chiu, SY Shieh, JM Chang, SC Lin, KC Dai, BT
Citation: Sy. Chiu et al., Characterization of additive systems for damascene Cu electroplating by the superfilling profile monitor, J VAC SCI B, 18(6), 2000, pp. 2835-2841
Properties and chemical-mechanical polishing characteristics of low dielectric constant polymer films: PAE-2 and Flare 2.0
Authors: Chen, WC Yen, CT Dai, BT Tsai, MS
Citation: Wc. Chen et al., Properties and chemical-mechanical polishing characteristics of low dielectric constant polymer films: PAE-2 and Flare 2.0, J CH INST C, 31(3), 2000, pp. 253-260
Nitric acid-based slurry with citric acid as an inhibitor for copper chemical mechanical polishing
Authors: Hu, TC Chiu, SY Dai, BT Tsai, MS Tung, IC Feng, MS
Citation: Tc. Hu et al., Nitric acid-based slurry with citric acid as an inhibitor for copper chemical mechanical polishing, MATER CH PH, 61(2), 1999, pp. 169-171
Chemical mechanical polishing of low-dielectric-constant polymers: Hydrogen silsesquioxane and methyl silsesquioxane
Authors: Chen, WC Lin, SC Dai, BT Tsai, MS
Citation: Wc. Chen et al., Chemical mechanical polishing of low-dielectric-constant polymers: Hydrogen silsesquioxane and methyl silsesquioxane, J ELCHEM SO, 146(8), 1999, pp. 3004-3008
The novel improvement of low dielectric constant methylsilsesquioxane by N2O plasma treatment
Authors: Chang, TC Liu, PT Mor, YS Sze, SM Yang, YL Feng, MS Pan, FM Dai, BT Chang, CY
Citation: Tc. Chang et al., The novel improvement of low dielectric constant methylsilsesquioxane by N2O plasma treatment, J ELCHEM SO, 146(10), 1999, pp. 3802-3806
Risultati: 1-9 |