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Results:
1-12
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Results: 12
Authors:
Feltin, E
Dalmasso, S
de Mierry, P
Beaumont, B
Lahreche, H
Bouille, A
Haas, H
Leroux, M
Gibart, P
Citation: E. Feltin et al., Green InGaN light-emitting diodes grown on silicon (111) by metalorganic vapor phase epitaxy, JPN J A P 2, 40(7B), 2001, pp. L738-L740
Authors:
Dalmasso, S
Damilano, B
Grandjean, N
Massies, J
Leroux, M
Reverchon, JL
Duboz, JY
Citation: S. Dalmasso et al., Optoelectronic characterization of blue InGaN/GaN LEDS grown by MBE, MAT SCI E B, 82(1-3), 2001, pp. 256-258
Authors:
Dalmasso, S
Damilano, B
Grandjean, N
Massies, J
Leroux, M
Reverchon, JL
Duboz, JY
Citation: S. Dalmasso et al., MBE grown InGaN quantum dots and quantum wells: effects of in-plane localization, THIN SOL FI, 380(1-2), 2000, pp. 195-197
Authors:
Grandjean, N
Damilano, B
Massies, J
Dalmasso, S
Citation: N. Grandjean et al., Enhanced luminescence efficiency due to exciton localization in self-assembled InGaN/GaN quantum dots, SOL ST COMM, 113(9), 2000, pp. 495-498
Authors:
Damilano, B
Grandjean, N
Massies, J
Dalmasso, S
Reverchon, JL
Calligaro, M
Duboz, JY
Siozade, L
Leymarie, J
Citation: B. Damilano et al., Improved radiative efficiency using self-formed GaInN/GaN quantum dots grown by molecular beam epitaxy, PHYS ST S-A, 180(1), 2000, pp. 363-368
Authors:
Dalmasso, S
Feltin, E
de Mierry, P
Beaumont, B
Gibart, P
Leroux, M
Citation: S. Dalmasso et al., Green electroluminescent (Ga, In, Al)N LEDs grown on Si (111), ELECTR LETT, 36(20), 2000, pp. 1728-1730
Authors:
Vennegues, P
Benaissa, M
Beaumont, B
Feltin, E
De Mierry, P
Dalmasso, S
Leroux, M
Gibart, P
Citation: P. Vennegues et al., Pyramidal defects in metalorganic vapor phase epitaxial Mg doped GaN, APPL PHYS L, 77(6), 2000, pp. 880-882
Authors:
de Mierry, P
Dalmasso, S
Beaumont, B
Gibart, P
Citation: P. De Mierry et al., Effect of an electric field on the electroluminescence and the photocurrent in InGaN single quantum well light emitting diodes, PHYS ST S-B, 216(1), 1999, pp. 321-324
Authors:
Grandjean, N
Damilano, B
Dalmasso, S
Leroux, M
Laugt, M
Massies, J
Citation: N. Grandjean et al., Effects of built-in polarization field on the optical properties of AlGaN/GaN quantum wells, PHYS ST S-A, 176(1), 1999, pp. 219-225
Authors:
Grandjean, N
Damilano, B
Dalmasso, S
Leroux, M
Laugt, M
Massies, J
Citation: N. Grandjean et al., Built-in electric-field effects in wurtzite AlGaN/GaN quantum wells, J APPL PHYS, 86(7), 1999, pp. 3714-3720
Authors:
Damilano, B
Grandjean, N
Dalmasso, S
Massies, J
Citation: B. Damilano et al., Room-temperature blue-green emission from InGaN/GaN quantum dots made by strain-induced islanding growth, APPL PHYS L, 75(24), 1999, pp. 3751-3753
Authors:
Grandjean, N
Massies, J
Dalmasso, S
Vennegues, P
Siozade, L
Hirsch, L
Citation: N. Grandjean et al., GaInN GaN multiple-quantum-well light-emitting diodes grown by molecular beam epitaxy, APPL PHYS L, 74(24), 1999, pp. 3616-3618
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