Authors:
Ronning, C
Dalmer, M
Uhrmacher, M
Restle, M
Vetter, U
Ziegeler, L
Hofsass, H
Gehrke, T
Jarrendahl, K
Davis, RF
Citation: C. Ronning et al., Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery, J APPL PHYS, 87(5), 2000, pp. 2149-2157
Authors:
Dalmer, M
Vetter, U
Restle, M
Stotzler, A
Hofsass, H
Ronning, C
Moodley, MK
Bharuth-Ram, K
Citation: M. Dalmer et al., Combination of emission channeling, photoluminescence and Mossbauer spectroscopy to identify rare earth defect complexes in semiconductors, HYPER INTER, 121(1-8), 1999, pp. 347-352